10Si05…10Si12
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 08 OCT 2026
Specifications
- Material
- Si
- Type
- rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 50–1200 V (see Variants)
- Forward current (IF)
- 11 A
- Rectified current (Io)
- 10 A
- Repetitive peak forward current (IFRM)
- 35 A
- Surge forward current (IFSM, 10 ms)
- 230 A
- Forward voltage (VF)
- 1.2 V
- Reverse current (IR)
- 3 mA
- Package
- DO-4 (F9-M)
Sources: [1]
Variants (20)
| Note | Compare | ||
|---|---|---|---|
| 10Si05 | 50 | ||
| 10Si05R | 50 | reverse polarity | |
| 10Si1 | 100 | ||
| 10Si1R | 100 | reverse polarity | |
| 10Si2 | 200 | ||
| 10Si2R | 200 | reverse polarity | |
| 10Si3 | 300 | ||
| 10Si3R | 300 | reverse polarity | |
| 10Si4 | 400 | ||
| 10Si4R | 400 | reverse polarity | |
| 10Si5 | 500 | ||
| 10Si5R | 500 | reverse polarity | |
| 10Si6 | 600 | ||
| 10Si6R | 600 | reverse polarity | |
| 10Si8 | 800 | ||
| 10Si8R | 800 | reverse polarity | |
| 10Si10 | 1000 | ||
| 10Si10R | 1000 | reverse polarity | |
| 10Si12 | 1200 | ||
| 10Si12R | 1200 | reverse polarity |
Click a column heading to sort. „+” adds a variant to the comparison (10Si05…10Si12).
Description
The 10Si05…10Si12 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (1st edition, 1983) with a repetitive peak reverse voltage VRRM of 50–1200 V and a rectified current Io of 10 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The block appears only in the 1st edition of the Agenda (printed „10 Si 05(R)” … „10 Si 12(R)”) [1]; the 2nd edition (1989) no longer lists these codes [2].
Each code also exists with R at the end (printed „(R)”); on the package drawing the stud is the cathode for the codes without R and the anode for the codes with R [1].
Measurement conditions (as printed in the table): IF at Tamb = (125) °C; Io at Tamb = (125) °C; VF at IF = 35 A; IR at Tamb = (125) °C; IFSM for 10 ms. Temperatures in brackets are printed in brackets in the table.
Gallery
No image availableDocuments
No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.1 „Diode redresoare”, „Diode cu siliciu”, pp. 430–431
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–499