General view

1N4001…1N4007

IPRS Băneasa

Also known as
1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
50–1600 V (see Variants)
Max. RMS forward current (IFRMSM)
1.15 A
Max. average forward current (IFAVM)
1 A
IFAVM given at
TL = 85 °C (see Variants)
Repetitive peak forward current (IFRM)
6.3–10 A (see Variants)
Surge forward current (IFSM, 10 ms)
30 A
I²t
4.5 A²s
Forward voltage (VF)
1.1 V
VF measured at IF
1 A (see Variants)
Threshold voltage (VF0)
0.95 V (see Variants)
Slope resistance (rF)
75 mΩ (see Variants)
Reverse current (IR)
0.05 mA
Max. junction temperature (Tj)
150 °C (see Variants)
Package
F-126

Sources: [1][5]

Variants (9)

Note
1N400150TL = 85 °C1010.9575150
1N4002100TL = 85 °C1010.9575150
1N4003200TL = 85 °C1010.9575150
1N4004400TL = 85 °C1010.9575150
1N4005600TL = 85 °C1010.9575150
1N4006800TL = 85 °C1010.9575150
1N40071000TL = 85 °C1010.9575150
D1N131300—6.3————printed „DIN 13” in this table
D1N161600—6.3————printed „DIN 16” in this table

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Description

The 1N4001…1N4007 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 50–1000 V (1300 and 1600 V for the D1N13 and D1N16 of the same block) and a maximum average forward current of 1 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The table prints two more codes in the same block as the 1N 4001…1N 4007, „DIN 13” (1300 V) and „DIN 16” (1600 V), with the same values except IFRM (6.3 A instead of 10 A) [1]. The selection guide (section 27.1.3) prints them „D1N 13/16” [3], which matches the coding table of section 27.1.2 for D (diode), 1 (1 A) and N (normal) [2]; the voltage class is written in hundreds of volts, as in the D10 N05 … N16 blocks of the table, while the coding table writes the voltage in volts (200…3000) [1][2]. They are in the Variants table as D1N13 and D1N16.

Coded as (JEDEC system) [4]:

Part Meaning
1 device with 2 electrodes (diode)
N semiconductor device
4001 identification number (01–9999)

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006 and 1N4007 among the „Standard rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [5]. The catalog values this page did not have (IFAVM temperature, IF of VF, VF0, rF, TJM) are under Variants [5]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [5]. For all the codes of this table the catalog gives IFSM 20 A; IR 5 µA (TJ = 25 °C) (elsewhere on this page: IFSM 30 A; IR 0.05 mA) [5].

Measurement conditions (as printed in the table): IFRMSM at Tamb = 75 °C; IFAVM at Tamb = 75 °C; VF at IF = 1 A; IR at Tamb = 100 °C; IFSM for 10 ms.

Gallery

IPRS Băneasa 1N4001…1N4007: F-126 package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)No image available
F-126 package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)
IPRS Băneasa 1N4001…1N4007: F-126 case outline, silicon diodes (dimensions in mm)No image available
F-126 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–491
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.3 „Ghid de selecție a diodelor redresoare cu siliciu (produse de IPRS Băneasa)”, p. 502
  4. [4]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480
  5. [5]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM < 100 A )”, pp. 5-20…5-21