General view

1N4151

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
fast switching diode
Reverse voltage (VR)
50 V
Forward current (IF)
0.2 A
Max. average forward current (IFAVM)
0.15 A
Surge forward current (IFSM, 10 ms)
2 A
Forward voltage (VF)
1 V
Reverse recovery time (trr)
4 ns
Total capacitance (Ct)
2 pF
Max. junction temperature (Tj)
200 °C
Thermal resistance, junction–case (Rth j-c)
350 °C/W
Package
DO-35 (F-80), glass

Sources: [1][4]

Description

The 1N4151 is a fast silicon switching diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) in a DO-35 (F-80) glass package [1]. The package drawing is in the Gallery.

The table prints „1N 4151” twice, with a repetitive peak reverse voltage VRRM of 35 V (first row) and 75 V (third row), and the same other values; between them is the 1N 4454, with 50 V [1]. The 1st edition of the Agenda (1983) lists the 1N 4151 once, with a reverse voltage VR of 50 V [3]; which of the two rows is the 1N 4151 (the other may be a misprint) is unclear, so VRRM is left out. The table gives a reverse recovery time trr of 4 ns, a maximum average forward current IFAVM of 150 mA and a surge forward current IFSM of 2 A at 25 °C, and a junction-to-case thermal resistance of 350 °C/W [1].

Coded as (JEDEC system) [2]:

Part Meaning
1 device with 2 electrodes (diode)
N semiconductor device
4151 identification number (01–9999)

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 1N4151 among the „High speed switching diodes” of its „Small signal” section [4], with VR ≥ 50 V, IF ≤ 200 mA, TVJ ≤ 200 °C, IFSM 2000 mA, VF ≤ 1 V (IF = 50 mA), Ctot ≤ 2 pF, trr ≤ 2 ns, DO-35 case [4].

The values given for the 1N4151 elsewhere on this page [1] differ: trr 4 ns; package DO-35 (F-80), glass.

Gallery

IPRS Băneasa 1N4151: DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)No image available
DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)
IPRS Băneasa 1N4151: DO-35 case outline, silicon diodes (dimensions in mm)No image available
DO-35 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.3 „Diode pentru semnale de mică putere”, „Diode cu siliciu, de comutație” and „Diode cu siliciu, de uz general”, p. 450
  4. [4]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „High speed switching diodes”, p. 5-01