General view

1N4448

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
fast switching diode
Repetitive peak reverse voltage (VRRM)
100 V
Reverse voltage (VR)
75 V
Forward current (IF)
0.2 A
Max. average forward current (IFAVM)
0.15 A
Surge forward current (IFSM, 10 ms)
2 A
Forward voltage (VF)
1 V
Reverse recovery time (trr)
4 ns
Total capacitance (Ct)
4 pF
Max. junction temperature (Tj)
200 °C
Thermal resistance, junction–case (Rth j-c)
350 °C/W
Package
DO-35 (F-80), glass

Sources: [1][3]

Description

The 1N4448 is a fast silicon switching diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 100 V, in a DO-35 (F-80) glass package [1]. The package drawing is in the Gallery.

The code is printed „1N 4448”. The table gives a reverse recovery time trr of 4 ns, a maximum average forward current IFAVM of 150 mA and a surge forward current IFSM of 2 A at 25 °C, and a junction-to-case thermal resistance of 350 °C/W [1].

Coded as (JEDEC system) [2]:

Part Meaning
1 device with 2 electrodes (diode)
N semiconductor device
4448 identification number (01–9999)

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 1N4448 among the „High speed switching diodes” of its „Small signal” section [3], with VR ≥ 75 V, IF ≤ 200 mA, TVJ ≤ 200 °C, IFSM 2000 mA, VF ≤ 1 V (IF = 100 mA), Ctot ≤ 4 pF, trr ≤ 4 ns, DO-35 case [3].

The values given for the 1N4448 elsewhere on this page [1] differ: package DO-35 (F-80), glass.

Gallery

IPRS Băneasa 1N4448: DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)No image available
DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)
IPRS Băneasa 1N4448: DO-35 case outline, silicon diodes (dimensions in mm)No image available
DO-35 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480
  3. [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „High speed switching diodes”, p. 5-01