20Si05…20Si15
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 08 OCT 2026
Specifications
- Material
- Si
- Type
- rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 50–1500 V (see Variants)
- Forward current (IF)
- 25–26 A (see Variants)
- Rectified current (Io)
- 20 A
- Repetitive peak forward current (IFRM)
- 70 A
- Surge forward current (IFSM, 10 ms)
- 250 A
- Forward voltage (VF)
- 1.5 V
- Reverse current (IR)
- 5 mA
- Package
- DO-5 (F-10M)
Sources: [1]
Variants (22)
| Note | Compare | |||
|---|---|---|---|---|
| 20Si05 | 50 | 25 | ||
| 20Si05R | 50 | 25 | reverse polarity | |
| 20Si1 | 100 | 25 | ||
| 20Si1R | 100 | 25 | reverse polarity | |
| 20Si2 | 200 | 25 | ||
| 20Si2R | 200 | 25 | reverse polarity | |
| 20Si3 | 300 | 25 | ||
| 20Si3R | 300 | 25 | reverse polarity | |
| 20Si4 | 400 | 25 | ||
| 20Si4R | 400 | 25 | reverse polarity | |
| 20Si5 | 500 | 25 | ||
| 20Si5R | 500 | 25 | reverse polarity | |
| 20Si6 | 600 | 25 | ||
| 20Si6R | 600 | 25 | reverse polarity | |
| 20Si8 | 800 | 26 | ||
| 20Si8R | 800 | 26 | reverse polarity | |
| 20Si10 | 1000 | 26 | ||
| 20Si10R | 1000 | 26 | reverse polarity | |
| 20Si12 | 1200 | 26 | ||
| 20Si12R | 1200 | 26 | reverse polarity | |
| 20Si15 | 1500 | 26 | ||
| 20Si15R | 1500 | 26 | reverse polarity |
Click a column heading to sort. „+” adds a variant to the comparison (20Si05…20Si15).
Description
The 20Si05…20Si15 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (1st edition, 1983) with a repetitive peak reverse voltage VRRM of 50–1500 V and a rectified current Io of 20 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The block appears only in the 1st edition of the Agenda (printed „20 Si05(R)” … „20 Si 15(R)”, over two pages) [1]; the 2nd edition (1989) no longer lists these codes [2].
Each code also exists with R at the end (printed „(R)”); on the package drawing the stud is the cathode for the codes without R and the anode for the codes with R [1].
Measurement conditions (as printed in the table): IF at Tamb = (150) °C; Io at Tamb = (150) °C; VF at IF = 70 A; IR at Tamb = 150 (printed „(150)” for the 20 Si 8…15) °C; IFSM for 10 ms. Temperatures in brackets are printed in brackets in the table.
Gallery
No image availableDocuments
No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.1 „Diode redresoare”, „Diode cu siliciu”, pp. 430–433
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–499