6Si05…6Si15
IPRS Băneasa
- Also known as
- 6Si1P, 6Si2P, 6Si3P, 6Si4P, 6Si5P
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si
- Type
- rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 50–1500 V (see Variants)
- Max. RMS forward current (IFRMSM)
- 6.8 A
- Max. average forward current (IFAVM)
- 6 A
- IFAVM given at
- TC = 100 °C (see Variants)
- Repetitive peak forward current (IFRM)
- 20 A
- Surge forward current (IFSM, 10 ms)
- 160 A
- I²t
- 28 A²s (see Variants)
- Forward voltage (VF)
- 1.2 V
- VF measured at IF
- 6 A (see Variants)
- Threshold voltage (VF0)
- 0.8 V (see Variants)
- Slope resistance (rF)
- 40 mΩ (see Variants)
- Reverse current (IR)
- 3 mA
- Max. junction temperature (Tj)
- 150 °C (see Variants)
- Package
- DO-4 (F9-M), TO-220 (see Variants)
Variants (27)
| Note | Compare | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 6Si05 | 50 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si05R | 50 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si1 | 100 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si1R | 100 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si1P | 100 | TC = 100 °C | 28 | 6 | 0.8 | 40 | 150 | TO-220 | P version: TO-220 package | |
| 6Si2 | 200 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si2R | 200 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si2P | 200 | TC = 100 °C | 28 | 6 | 0.8 | 40 | 150 | TO-220 | P version: TO-220 package | |
| 6Si3 | 300 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si3R | 300 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si3P | 300 | TC = 100 °C | 28 | 6 | 0.8 | 40 | 150 | TO-220 | P version: TO-220 package | |
| 6Si4 | 400 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si4R | 400 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si4P | 400 | TC = 100 °C | 28 | 6 | 0.8 | 40 | 150 | TO-220 | P version: TO-220 package | |
| 6Si5 | 500 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si5R | 500 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si5P | 500 | TC = 100 °C | 28 | 6 | 0.8 | 40 | 150 | TO-220 | P version: TO-220 package | |
| 6Si6 | 600 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si6R | 600 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si8 | 800 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si8R | 800 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si10 | 1000 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si10R | 1000 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si12 | 1200 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si12R | 1200 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity | |
| 6Si15 | 1500 | — | — | — | — | — | — | DO-4 (F9-M) | ||
| 6Si15R | 1500 | — | — | — | — | — | — | DO-4 (F9-M) | reverse polarity |
Click a column heading to sort. „+” adds a variant to the comparison (6Si05…6Si15).
Description
The 6Si05…6Si15 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 50–1500 V and a maximum average forward current of 6 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The codes are printed „6 Si 05(R)” … „6 Si 15(R)”, and „6 Si 1(R)/6Si 1P” … „6 Si 5(R)/6Si 5P” for 100–500 V; the package drawing notes that the codes with P are in a TO-220 package [1].
Each code also exists with R at the end (printed „(R)”); on the package drawing the stud is the cathode for the codes without R and the anode for the codes with R [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 6Si1P, 6Si2P, 6Si3P, 6Si4P and 6Si5P among the „Standard rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [2]. The catalog values this page did not have (IFAVM temperature, i²t, IF of VF, VF0, rF, TJM) are under Variants [2]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [2]. For all the codes of this table the catalog gives IFRM 25 A; IFSM 60 A; VF 1.25 V; IR 1 mA (TJ = 125 °C) (elsewhere on this page: IFRM 20 A; IFSM 160 A; VF 1.2 V; IR 3 mA) [2].
Measurement conditions (as printed in the table): IFRMSM at Tamb = 125 °C; IFAVM at Tamb = 125 °C; VF at IF = 20 A; IR at Tamb = 125 °C; IFSM for 10 ms.
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–491
- [2]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM < 100 A )”, pp. 5-22…5-23