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BA111
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 09 OCT 2026
Specifications
- Type
- varicap diode
- Peak reverse voltage (VRM)
- 20 V
- Reverse current (IR)
- 100 µA (VR = 10 V)
- Max. junction temperature (Tj)
- 150 °C
- Capacitance Ctot at the higher reverse voltage
- 34.7 pF (VR = 10 V)
- Capacitance Ctot at the lower reverse voltage
- 55 pF (VR = 2 V)
- Capacitance ratio (as printed)
- 0.5…1.2
- Package
- DO-7 (F-2), glass
Sources: [1]
Description
The BA111 is a varicap diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) in a DO-7 (F-2) glass package with 1…3 coloured rings [1]. The package drawing is in the Gallery.
The code is printed „BA 111”. The table gives a peak reverse voltage VRM of 20 V, a junction temperature Tj of 150 °C, a capacitance Ctot of 34.7 pF at VR = 10 V and of 55 pF at VR = 2 V, a capacitance ratio of 0.5…1.2 (as printed; column „Ctot (VR2)/Ctot (VR1)”) and a reverse current IRM of 100 µA at VR = 10 V [1].
Gallery
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No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.4.2 „Diode varicap produse în R.S.R.” (producător: IPRS-Băneasa), p. 515