General view

BA12X

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
09 OCT 2026

Specifications

Type
controlled-avalanche rectifier diode
Repetitive peak reverse voltage (VRRM)
90 V
Max. average forward current (IFAVM)
0.4 A
Surge forward current (IFSM, 10 ms)
6 A
Reverse recovery time (trr)
50 ns
Thermal resistance, junction–case (Rth j-c)
300 °C/W
Package
DO-35 (F-80), glass

Sources: [1][2]

Description

The BA12X is a controlled-avalanche rectifier diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 90 V and a maximum average forward current IFAVM of 0.4 A, in a DO-35 package [1].

The code is printed „BA12 X”; the table gives no temperatures, I²t, avalanche voltage or PRSM for it [1].

The table of fast silicon switching diodes of section 27.3.2 also lists the „BA 12X”, with VRRM 90 V, a reverse recovery time trr of 50 ns, IFAVM 400 mA at 25 °C, no IFSM (the table of section 27.5 gives 6 A) and a junction-to-case thermal resistance of 300 °C/W, in a DO-35 (F-80) glass package (drawing in the Gallery) [2].

Gallery

IPRS Băneasa BA12X: DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)No image available
DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.5 „Alte diode semiconductoare produse în R.S.R.” (producător: IPRS – Băneasa), A. „Diode redresoare cu avalanșă controlată”, p. 516
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513