BA157…BA159
IPRS Băneasa
- Also known as
- BA157, BA158, BA159
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si
- Type
- rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 400–1000 V (see Variants)
- Forward current (IF)
- 0.5 A
- Max. average forward current (IFAVM)
- 0.4 A
- IFAVM given at
- TL = 100 °C
- Rectified current (Io)
- 0.4 A
- Repetitive peak forward current (IFRM)
- 2 A
- Surge forward current (IFSM, 10 ms)
- 15 A
- I²t
- 0.8 A²s
- Forward voltage (VF)
- 1.5 V
- VF measured at IF
- 0.4 A
- Threshold voltage (VF0)
- 1.2 V
- Slope resistance (rF)
- 450 mΩ
- Reverse current (IR)
- 0.005 mA
- Reverse recovery time (trr)
- 300 ns
- Max. junction temperature (Tj)
- 150 °C
- Thermal resistance, junction–case (Rth j-c)
- 75 °C/W
- Package
- F-126
Variants (3)
| Compare | ||
|---|---|---|
| BA157 | 400 | |
| BA158 | 600 | |
| BA159 | 1000 |
Click a column heading to sort. „+” adds a variant to the comparison (BA157…BA159).
Description
The BA157…BA159 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (1st edition, 1983) with a repetitive peak reverse voltage VRRM of 400–1000 V and a rectified current Io of 0.4 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The 1st edition of the Agenda lists the block among the rectifier diodes (printed „BA 157”, „BA 158”, „BA 159”) [1]; the 2nd edition (1989) does not list it among the rectifier diodes [3], but lists the „BA 157 … 159” among the fast silicon switching diodes [4].
In that table it gives VRRM 400…1000 V, a reverse recovery time trr of 300 ns, a maximum average forward current IFAVM of 0.4 A at 100 °C, a surge forward current IFSM of 12 A at 150 °C, I²t 0.8 A²s at 150 °C and a junction-to-case thermal resistance of 75 °C/W, in an F-126 package [4]; the column header gives IFAVM in mA, but 0.4 only makes sense in amperes [4]. The specifications take the IFAVM, I²t and thermal resistance from it; their IFSM is the 15 A of the 1st edition, given for 10 ms and without a temperature [1].
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| A | low-power signal diode |
| 157 | serial number: three digits (100–999), for components for general use |
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BA157, BA158 and BA159 among the „Fast recovery rectifiers ( IFAVM < 10 A )” of its „Rectifiers” section [5]. The catalog values this page did not have (IFAVM temperature, IF of VF, VF0, rF, TJM) are under Variants [5]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value, trr is a maximum (in µs) and i²t is printed in kA²s [5]. For all the codes of this table the catalog gives IFRM 2.5 A; i²t 1.2 A²s (elsewhere on this page: IFRM 2 A; i²t 0.8 A²s) [5].
Measurement conditions (as printed in the table of the 1st edition): IF at Tamb = 25 °C; Io at Tamb = 25 °C; VF at IF = 0.4 A; IR at Tamb = 25 °C; IFSM for 10 ms.
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.1 „Diode redresoare”, „Diode cu siliciu”, pp. 428–429
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480
- [3]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–499
- [4]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513
- [5]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Fast recovery rectifiers ( IFAVM < 10 A )”, pp. 5-44…5-45