General view

BA170…BA172

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
09 OCT 2026

Specifications

Material
Si
Type
fast switching diode
Repetitive peak reverse voltage (VRRM)
20…50 V
Reverse voltage (VR)
20–50 V (see Variants)
Max. average forward current (IFAVM)
0.16 A
Reverse recovery time (trr)
250 ns
Thermal resistance, junction–case (Rth j-c)
410 °C/W
Package
DO-35 (F-80), glass

Sources: [1]

Variants (3)

Note
BA17020VR from the 1st edition
BA17130VR from the 1st edition
BA17250VR from the 1st edition

Click a column heading to sort. „+” adds a variant to the comparison (BA170…BA172).

Description

The BA170…BA172 is a series of fast silicon switching diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 20…50 V, in a DO-35 (F-80) glass package [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The table prints the series in one row, „BA 170…172”, with VRRM 20…50 V, a reverse recovery time trr of 250 ns, IFAVM 160 mA at 25 °C, no IFSM and a junction-to-case thermal resistance of 410 °C/W [1].

The 1st edition of the Agenda (1983) lists the three codes separately among the general-purpose silicon diodes, with reverse voltages VR of 20 V (BA 170), 30 V (BA 171) and 50 V (BA 172) [2]; these are in the Variants table.

Gallery

IPRS Băneasa BA170…BA172: DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)No image available
DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.3 „Diode pentru semnale de mică putere”, „Diode cu siliciu, de comutație” and „Diode cu siliciu, de uz general”, p. 450