General view

BA171

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Reverse voltage (VR)
30 V
Forward current (IF)
0.15 A
Forward voltage (VF)
1 V
Reverse current (IR)
≤ 100 nA
Reverse recovery time (trr)
100 ns
Max. junction temperature (Tj)
150 °C
Package
DO-35
Application
general application diodes

Sources: [1]

Description

The BA171 is a silicon general application diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BA171 among the „General application diodes” of its „Small signal” section [1], with VR ≥ 30 V, IF ≤ 150 mA, TVJ ≤ 150 °C, VF ≤ 1 V (IF = 80 mA), IR ≤ 100 nA, rf ≤ 0.5 ohms, trr ≤ 100 ns, DO-35 case [1].

Gallery

IPRS Băneasa BA171: DO-35 case outline, silicon diodes (dimensions in mm)No image available
DO-35 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „General application diodes”, p. 5-02