General view

BA243

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Reverse voltage (VR)
20 V
Forward current (IF)
0.1 A
Forward voltage (VF)
1 V
Total capacitance (Ct)
2 pF
Max. junction temperature (Tj)
150 °C
Package
DO-35
Application
band switching diodes

Sources: [1]

Description

The BA243 is a silicon band switching diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BA243 among the „Band switching diodes” of its „Small signal” section [1], with VR ≥ 20 V, IF ≤ 100 mA, TVJ ≤ 150 °C, VF ≤ 1 V (IF = 100 mA), rf ≤ 1 ohms, Ctot ≤ 2 pF (VR = 15 V), DO-35 case [1].

Gallery

IPRS Băneasa BA243: DO-35 case outline, silicon diodes (dimensions in mm)No image available
DO-35 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „Band switching diodes”, p. 5-02