IPRS Băneasa BAW21

Specifications

Material: Si
Reverse voltage (VR): 70 V
Forward current (IF): 0.4 A
Surge forward current (IFSM, 10 ms): 6 A
Forward voltage (VF): 1 V
Reverse recovery time (trr): 50 ns
Total capacitance (Ct): 35 pF
Max. junction temperature (Tj): 175 °C
Package: DO-35
Application: avalanche diodes for telephony

Sources: [1]

Description

The BAW21 is a silicon avalanche diode for telephony made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BAW21 among the „Avalanche diodes for telephony” of its „Small signal” section [1], with VR ≥ 70 V (footnote: VR can be exceeded if IRM is observed: at TJ = 25 °C the energy (E) must be ≤ 5 mWs, at TJ > 25 °C E must be reduced by 0.015 mWs/°C; at square wave pulses with T ≥ 50 ms the duty cycle must be tp/T ≤ 0.01), IF ≤ 400 mA (the IF value is valid if the leads are kept at TA = 25 °C at 8 mm from the case), TVJ ≤ 175 °C, IFSM 6000 mA, VF ≤ 1 V (IF = 200 mA), Ctot ≤ 35 pF, trr ≤ 50 ns, DO-35 case [1].

Gallery

IPRS Băneasa BAW21: DO-35 case outline, silicon diodes (dimensions in mm) — DO-35 case outline, silicon diodes (dimensions in mm)

Documents

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References

[1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „Avalanche diodes for telephony”, p. 5-01