BAX157…BAX159

The BAX157…BAX159 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (1st edition, 1983) with a repetitive peak reverse voltage VRRM of 400–1000 V and a rectified current Io of 0.4 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The 1st edition of the Agenda lists the block among the rectifier diodes (printed „BAX 157”, „BAX 158”, „BAX 159”) [1]; the 2nd edition (1989) does not list it among the rectifier diodes [2], but lists the „BAX 157” (only this code) among the fast silicon switching diodes [3].

In that table it gives VRRM 400 V, a reverse recovery time trr of 400 ns, a maximum average forward current IFAVM of 0.4 A at 100 °C, a surge forward current IFSM of 12 A at 150 °C, I²t 0.8 A²s at 150 °C and a junction-to-case thermal resistance of 62 °C/W, in an F-126 package [3]; the column header gives IFAVM in mA, but 0.4 only makes sense in amperes [3]. The specifications take the IFAVM, I²t and thermal resistance from it (it gives them for the BAX 157 only); their IFSM is the 15 A of the 1st edition, given for 10 ms and without a temperature [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BAX157 among the „Fast recovery rectifiers ( IFAVM < 10 A )” of its „Rectifiers” section [4]. The catalog values this page did not have (IFAVM temperature, IF of VF, VF0, rF, TJM) are under Variants [4]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum, trr is a maximum (in µs) and i²t is printed in kA²s [4]. For the BAX157 the catalog gives IFRM 2.5 A; i²t 1.2 A²s (elsewhere on this page: IFRM 2 A; i²t 0.8 A²s) [4].

Measurement conditions (as printed in the table of the 1st edition): IF at Tamb = 25 °C; Io at Tamb = 25 °C; VF at IF = 0.4 A; IR at Tamb = 25 °C; IFSM for 10 ms.