General view

BAY93

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
09 OCT 2026

Specifications

Material
Si
Type
fast switching diode
Repetitive peak reverse voltage (VRRM)
20 V
Max. average forward current (IFAVM)
0.075 A
Reverse recovery time (trr)
15 ns
Thermal resistance, junction–case (Rth j-c)
350 °C/W
Package
DO-35 (F-80), glass

Sources: [1]

Description

The BAY93 is a fast silicon switching diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 20 V, in a DO-35 (F-80) glass package [1]. The package drawing is in the Gallery.

The code is printed „BAY 93”. The table gives a reverse recovery time trr of 15 ns, a maximum average forward current IFAVM of 75 mA at 25 °C, no IFSM, and a junction-to-case thermal resistance of 350 °C/W [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
A low-power signal diode
Y93 serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99)

Gallery

IPRS Băneasa BAY93: DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)No image available
DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480