General view

BB121

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
09 OCT 2026

Specifications

Type
varicap diode
Peak reverse voltage (VRM)
30 V
Reverse current (IR)
0.05 µA (VR = 28 V)
Max. junction temperature (Tj)
150 °C
Capacitance Ctot at the higher reverse voltage
2.0…2.35 pF (VR = 25 V), 2.25…2.65 pF (VR = 25 V) (see Variants)
Capacitance Ctot at the lower reverse voltage
11 pF (VR = 3 V), 12 pF (VR = 3 V) (see Variants)
Capacitance ratio (as printed)
4.5…6
Package
DO-35 (F-80), glass

Sources: [1]

Variants (2)

Compare
BB121A2.0…2.35 pF (VR = 25 V)11 pF (VR = 3 V)
BB121B2.25…2.65 pF (VR = 25 V)12 pF (VR = 3 V)

Click a column heading to sort. „+” adds a variant to the comparison (BB121).

Description

The BB121 is a series of varicap diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) in a DO-35 (F-80) glass package [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The codes are printed „BB 121 A” and „BB 121 B”. The table gives for both a peak reverse voltage VRM of 30 V, a junction temperature Tj of 150 °C, a capacitance ratio of 4.5…6 (as printed; column „Ctot (VR2)/Ctot (VR1)”) and a reverse current IRM of 0.05 µA at VR = 28 V; the capacitance Ctot of each code at VR = 25 V and at VR = 3 V is in the Variants table [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
B variable-capacitance (varicap) diode
121 serial number: three digits (100–999), for components for general use
A letter with no coded meaning, marking a constructional variant

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.4.2 „Diode varicap produse în R.S.R.” (producător: IPRS-Băneasa), p. 515
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480