General view

BB125

IPRS Băneasa

Also known as
BB125A, BB125B, BB125C
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
varicap diode
Peak reverse voltage (VRM)
30 V
Reverse voltage (VR)
30 V
Reverse current (IR)
0.05 µA (VR = 28 V)
Max. junction temperature (Tj)
150 °C
Capacitance Ctot at the higher reverse voltage
2…2.35 pF (VR = 25 V), 2.25…2.65 pF (VR = 25 V), 2.5…3.2 pF (VR = 25 V), 2–3.2 pF (25 V) (see Variants)
Capacitance Ctot at the lower reverse voltage
11 pF (VR = 3 V), 13 pF (VR = 3 V) (see Variants)
Capacitance ratio (as printed)
4…6, 4–6 (3/25 V/V) (see Variants)
Package
DO-35 (F-80), glass, DO-35 (see Variants)

Sources: [1][3]

Variants (4)

Compare
BB125A2…2.35 pF (VR = 25 V)11 pF (VR = 3 V)4…6DO-35 (F-80), glass
BB125B2.25…2.65 pF (VR = 25 V)13 pF (VR = 3 V)4…6DO-35 (F-80), glass
BB125C2.5…3.2 pF (VR = 25 V)13 pF (VR = 3 V)4…6DO-35 (F-80), glass
BB1252–3.2 pF (25 V)—4–6 (3/25 V/V)DO-35

Click a column heading to sort. „+” adds a variant to the comparison (BB125).

Description

The BB125 is a series of varicap diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) in a DO-35 (F-80) glass package [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The codes are printed „BB 125 A”, „BB 125 B” and „BB 125 C”. The table gives for all of them a peak reverse voltage VRM of 30 V, a junction temperature Tj of 150 °C, a capacitance ratio of 4…6 (as printed; column „Ctot (VR2)/Ctot (VR1)”) and a reverse current IRM of 0.05 µA at VR = 28 V; the capacitance Ctot of each code at VR = 25 V and at VR = 3 V is in the Variants table [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
B variable-capacitance (varicap) diode
125 serial number: three digits (100–999), for components for general use
A letter with no coded meaning, marking a constructional variant

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BB125, BB125A, BB125B and BB125C among the „Variable capacitance diodes” of its „Small signal” section [3]. The values of the codes new on this page are under Variants [3]. For the BB125 it gives VR ≥ 30 V, Ctot 2–3.2 pF (f = 1 MHz, VR = 25 V), Ctot ratio 4–6 (3/25 V/V), rs ≤ 0.8 ohms (Ctot = 9 pF), DO-35 case [3]. For the BB125A it gives VR ≥ 30 V, Ctot 2–2.35 pF (f = 1 MHz, VR = 25 V), Ctot ratio 4–6 (3/25 V/V), rs ≤ 0.8 ohms (Ctot = 9 pF), DO-35 case [3]. For the BB125B it gives VR ≥ 30 V, Ctot 2.25–2.65 pF (f = 1 MHz, VR = 25 V), Ctot ratio 4–6 (3/25 V/V), rs ≤ 0.8 ohms (Ctot = 9 pF), DO-35 case [3]. For the BB125C it gives VR ≥ 30 V, Ctot 2.5–3.2 pF (f = 1 MHz, VR = 25 V), Ctot ratio 4–6 (3/25 V/V), rs ≤ 0.8 ohms (Ctot = 9 pF), DO-35 case [3].

The values given for the BB125 elsewhere on this page [1] differ: Ctot ratio 4…6; package DO-35 (F-80), glass.

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.4.2 „Diode varicap produse în R.S.R.” (producător: IPRS-Băneasa), p. 515
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480
  3. [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „Variable capacitance diodes”, p. 5-03