General view

BB222

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
09 OCT 2026

Specifications

Type
varicap diode
Peak reverse voltage (VRM)
30 V
Reverse current (IR)
0.05 µA (VR = 28 V)
Max. junction temperature (Tj)
150 °C
Capacitance Ctot at the higher reverse voltage
1.8…2.6 pF (VR = 25 V)
Capacitance Ctot at the lower reverse voltage
11 pF (VR = 3 V)
Capacitance ratio (as printed)
4.3…6
Package
DO-35 (F-80), glass

Sources: [1]

Description

The BB222 is a varicap diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) in a DO-35 (F-80) glass package [1]. The package drawing is in the Gallery.

The code is printed „BB 222”. The table gives a peak reverse voltage VRM of 30 V, a junction temperature Tj of 150 °C, a capacitance Ctot of 1.8…2.6 pF at VR = 25 V and of 11 pF at VR = 3 V, a capacitance ratio of 4.3…6 (as printed; column „Ctot (VR2)/Ctot (VR1)”) and a reverse current IRM of 0.05 µA at VR = 28 V [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
B variable-capacitance (varicap) diode
222 serial number: three digits (100–999), for components for general use

Gallery

IPRS Băneasa BB222: DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)No image available
DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.4.2 „Diode varicap produse în R.S.R.” (producător: IPRS-Băneasa), p. 515
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480