General view

β410

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
varicap diode
Reverse voltage (VR)
12 V
Reverse current (IR)
5 µA (VR = 12 V)
Max. junction temperature (Tj)
150 °C
Capacitance Ctot at the higher reverse voltage
7.5–11.5 pF (4 V)
Capacitance Ctot at the lower reverse voltage
7.5…11.5 pF (VR = 4 V)
Capacitance ratio (as printed)
1.6 (4/9 V/V)
Package
DO-35 (F-80), glass

Sources: [1][2]

Description

The β410 is a varicap diode of IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) as withdrawn from production, in a DO-35 (F-80) glass package [1]. The package drawing is in the Gallery.

The code is printed „β 410”. The table gives no VRM, a junction temperature Tj of 150 °C, no capacitance at VR = 9 V, a capacitance Ctot of 7.5…11.5 pF at VR = 4 V, no capacitance ratio and a reverse current IRM of 5 µA at VR = 12 V [1].

A note to the table says that the β 310 and β 410 have been withdrawn from production („scos din fabricație”) [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the β410 among the „Variable capacitance diodes” of its „Small signal” section [2], with VR ≥ 12 V, Ctot 7.5–11.5 pF (f = 1 MHz, VR = 4 V), Ctot ratio 1.6 (4/9 V/V), DO-35 case [2].

The values given for the β410 elsewhere on this page [1] differ: package DO-35 (F-80), glass.

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.4.2 „Diode varicap produse în R.S.R.” (producător: IPRS-Băneasa), p. 515
  2. [2]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „Variable capacitance diodes”, p. 5-03