General view

βB113

IPRS Băneasa

Also known as
βB113AN, βB113BN
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Reverse voltage (VR)
32 V
Capacitance Ctot at the lower reverse voltage
230–280 pF (1 V)
Capacitance ratio (as printed)
17.7 (1/30 V/V), 15.3 (1/30 V/V) (see Variants)
Package
MP-48
Application
triple variable capacitance diodes

Sources: [1]

Variants (2)

Note
βB113AN17.7 (1/30 V/V)1990 catalogue (preliminary data); Ctot at f = 1 MHz; rs ≤ 4 ohms (Ctot = 200 pF)
βB113BN15.3 (1/30 V/V)1990 catalogue (preliminary data); Ctot at f = 1 MHz; rs ≤ 5 ohms (Ctot = 200 pF)

Click a column heading to sort. „+” adds a variant to the comparison (βB113).

Description

The βB113 is a silicon triple variable capacitance diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the βB113AN and βB113BN (preliminary data) among the „Triple variable capacitance diodes” of its „Small signal” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa βB113: MP-48 case outline, silicon diodes (dimensions in mm)No image available
MP-48 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „Triple variable capacitance diodes”, p. 5-03