βB313
IPRS Băneasa
- Also known as
- βB313N, βB313AN, βB313BN
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si (see Variants)
- Type
- varicap diode, triple
- Peak reverse voltage (VRM)
- 12–32 V (see Variants)
- Reverse voltage (VR)
- 12 V (see Variants)
- Reverse current (IR)
- 0.05 µA (VR = 12 V), 0.05 µA (VR = 32 V) (see Variants)
- Capacitance Ctot at the higher reverse voltage
- 40 pF (VR = 5.5 V)
- Capacitance Ctot at the lower reverse voltage
- 440…530 pF (VR = 1 V), 440–530 pF (1 V), 440 pF (1 V) (see Variants)
- Capacitance ratio (as printed)
- 20, 20 (1/8.5 V/V), 15 (1/8.5 V/V) (see Variants)
- Package
- MP48, MP-48 (see Variants)
Variants (6)
| Note | Compare | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| βB313 | — | 12 | — | 0.05 µA (VR = 12 V) | 440…530 pF (VR = 1 V) | 20 | MP48 | ||
| βB313A | — | 12 | — | 0.05 µA (VR = 12 V) | 440…530 pF (VR = 1 V) | 20 | MP48 | ||
| βB313B | — | 32 | — | 0.05 µA (VR = 32 V) | 440…530 pF (VR = 1 V) | 20 | MP48 | ||
| βB313N | Si | — | 12 | — | 440–530 pF (1 V) | 20 (1/8.5 V/V) | MP-48 | 1990 catalogue; Ctot at f = 1 MHz; rs ≤ 2.5 ohms (Ctot = 440 pF) | |
| βB313AN | Si | — | 12 | — | 440 pF (1 V) | 20 (1/8.5 V/V) | MP-48 | 1990 catalogue; Ctot at f = 1 MHz; rs ≤ 2.5 ohms (Ctot = 440 pF) | |
| βB313BN | Si | — | 12 | — | 440 pF (1 V) | 15 (1/8.5 V/V) | MP-48 | 1990 catalogue; Ctot at f = 1 MHz; rs ≤ 3 ohms (Ctot = 440 pF) |
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Description
The βB313 is a series of triple varicap diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) in an MP48 package [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The codes are printed „βB 313(A)” and „βB 313 B”; „βB 313(A)” is read here as two codes, βB313 and βB313A, the A in brackets being a second version, and the book does not say how the versions differ [1]. The table gives for all of them a capacitance Ctot of 40 pF at VR = 5.5 V and of 440…530 pF at VR = 1 V and a capacitance ratio of 20 (as printed); the peak reverse voltage VRM (12 V for the βB 313(A), 32 V for the βB 313 B) and the reverse current IRM (0.05 µA at VR = VRM) are in the Variants table; no junction temperature is given [1].
The table marks these codes with note 2, „diode triple” (triple diodes), and draws an MP48 package with the leads K, A1, A2 and A3 [1]. On the βB 313 B the note mark looks like a 3, but the table has only notes 1 and 2 [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the βB313N, βB313AN and βB313BN among the „Triple variable capacitance diodes” of its „Small signal” section [2]. The values of the codes new on this page are under Variants [2].
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.4.2 „Diode varicap produse în R.S.R.” (producător: IPRS-Băneasa), p. 515
- [2]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „Triple variable capacitance diodes”, p. 5-03