βB413
IPRS Băneasa
- Also known as
- βB413N, βB413AN, βB413BN
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si (see Variants)
- Type
- varicap diode, triple
- Peak reverse voltage (VRM)
- 32 V
- Reverse voltage (VR)
- 32 V (see Variants)
- Capacitance Ctot at the higher reverse voltage
- 24 pF (VR = 20 V), 20 pF (VR = 20 V) (see Variants)
- Capacitance Ctot at the lower reverse voltage
- 345…410 pF (VR = 1 V), 345–410 pF (1 V) (see Variants)
- Capacitance ratio (as printed)
- 20, 14 (1/20 V/V), 17 (1/20 V/V) (see Variants)
- Package
- MP48, MP-48 (see Variants)
Variants (6)
| Note | Compare | |||||||
|---|---|---|---|---|---|---|---|---|
| βB413 | — | — | 24 pF (VR = 20 V) | 345…410 pF (VR = 1 V) | 20 | MP48 | ||
| βB413A | — | — | 20 pF (VR = 20 V) | 345…410 pF (VR = 1 V) | 20 | MP48 | ||
| βB413B | — | — | 20 pF (VR = 20 V) | 345…410 pF (VR = 1 V) | 20 | MP48 | ||
| βB413N | Si | 32 | — | 345–410 pF (1 V) | 14 (1/20 V/V) | MP-48 | 1990 catalogue; Ctot at f = 1 MHz; rs ≤ 2 ohms (Ctot = 345 pF) | |
| βB413AN | Si | 32 | — | 345–410 pF (1 V) | 17 (1/20 V/V) | MP-48 | 1990 catalogue; Ctot at f = 1 MHz; rs ≤ 2 ohms (Ctot = 345 pF) | |
| βB413BN | Si | 32 | — | 345–410 pF (1 V) | 17 (1/20 V/V) | MP-48 | 1990 catalogue; Ctot at f = 1 MHz; rs ≤ 2 ohms (Ctot = 345 pF) |
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Description
The βB413 is a series of triple varicap diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) in an MP48 package [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The codes are printed „βB 413” and „βB 413 A(B)”; „βB 413 A(B)” is read here as two codes, βB413A and βB413B, the B in brackets replacing the A, and the book does not say how the versions differ [1]. The table gives for all of them a peak reverse voltage VRM of 32 V, a capacitance Ctot of 345…410 pF at VR = 1 V and a capacitance ratio of 20 (as printed); the capacitance at VR = 20 V (24 pF for the βB 413, 20 pF for the βB 413 A(B)) is in the Variants table; no junction temperature and no reverse current are given [1].
The table marks these codes with note 2, „diode triple” (triple diodes), and draws an MP48 package with the leads K, A1, A2 and A3 [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the βB413N, βB413AN and βB413BN among the „Triple variable capacitance diodes” of its „Small signal” section [2]. The values of the codes new on this page are under Variants [2].
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.4.2 „Diode varicap produse în R.S.R.” (producător: IPRS-Băneasa), p. 515
- [2]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „Triple variable capacitance diodes”, p. 5-03