General view

BZV45

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
temperature compensated reference diode
Zener voltage, nominal (VZT)
6.2 V
Test current (IZT)
5 mA
Differential resistance (rZ)
20 Ω
Temperature coefficient of VZ (αVZ)
≤ 0.2 ×10⁻⁴/°C
Package
DO-35
Application
temperature compensated voltage reference

Sources: [1]

Description

The BZV45 is a silicon temperature compensated reference diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BZV45 (preliminary data) among the „Temperature compensated reference diodes” of its „Zener” section [1], with VZ typ. 6.2 V (IZ = 5 mA), rZT ≤ 20 Ω, test temperatures 0/25/100 °C, ΔVZ ≤ 0.012 V, max. temperature coefficient 0.2 ×10⁻⁴/°C, DO-35 case [1].

Gallery

IPRS Băneasa BZV45: DO-35 case outline, silicon diodes (dimensions in mm)No image available
DO-35 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Zener”, „Temperature compensated reference diodes”, p. 5-05