D1000N

The D1000N is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 1400–2800 V and a maximum average forward current of 1000 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The table prints the block as „D1000 N 1400 T … 2800 T”, with the voltage classes 1400, 1600, 1800, 2000, 2200, 2400, 2600 and 2800 V; the codes in the Variants table are formed by the coding table of the same section (NTR 19036-80) [1][2].

Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:

Part	Meaning
D	function: diode
1000	average forward current IFAV, in A (at the specified ambient temperature)
N	type / polarity: N = normal (R = reverse polarity, anode on the base; F = fast; A = controlled avalanche)
1400	repetitive peak reverse voltage VRRM, in V
T	package: T = disc (A = wire–wire, B = stud with braided lead, E = flat base with braided lead, T = disc)

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D1000N1400, D1000N1600, D1000N1800, D1000N2000, D1000N2200, D1000N2400, D1000N2600 and D1000N2800 among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [3]. The catalog values this page did not have (IFAVM temperature, IF of VF, VF0, rF, TJM) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s; the catalog prints these codes without the final letter they have on this page (D1000N1400…D1000N2800) [3]. For all the codes of this table the catalog gives VF 1.9 V; IR 50 mA (TJ = 150 °C) (elsewhere on this page: VF 1.5 V; IR 80 mA) [3].

Measurement conditions (as printed in the table): IFRMSM at Tamb = 25 °C; IFAVM at Tamb = (90) °C; VF at IF = 3000 A; IR at Tamb = 150 °C; IFSM for 10 ms. Temperatures in brackets are printed in brackets in the table.