D10A4…D10A10
IPRS Băneasa
- Also known as
- D10A4, D10A6, D10A8, D10A10
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Type
- controlled-avalanche rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 5 different values (see Variants)
- Max. average forward current (IFAVM)
- 10 A
- IFAVM given at
- TC = 125 °C (see Variants)
- Repetitive peak forward current (IFRM)
- 35 A (see Variants)
- Surge forward current (IFSM, 10 ms)
- 150–210 A (see Variants)
- I²t
- 110–220 A²s (see Variants)
- Forward voltage (VF)
- 1.4 V (see Variants)
- VF measured at IF
- 35 A (see Variants)
- Threshold voltage (VF0)
- 0.85 V (see Variants)
- Slope resistance (rF)
- 15 mΩ (see Variants)
- Reverse current (IR)
- 3000 µA (TJ = 150 °C) (see Variants)
- Avalanche voltage (VRA)
- 5 different values (see Variants)
- Non-repetitive peak reverse power (PRSM)
- 5 different values (see Variants)
- Package
- DO-4
Variants (5)
| Note | Compare | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| D10A4…D10A10 | 400…1000 V | — | — | 150 | 110 | — | — | — | — | — | 450…1700 V | 30…6 kW | the whole series, as given elsewhere on this page | |
| D10A4 | 400 | TC = 125 °C | 35 | 210 | 220 | 1.4 | 35 | 0.85 | 15 | 3000 µA (TJ = 150 °C) | 450–750 V | 30 kW | 1990 catalogue | |
| D10A6 | 600 | TC = 125 °C | 35 | 210 | 220 | 1.4 | 35 | 0.85 | 15 | 3000 µA (TJ = 150 °C) | 720–1000 V | 18 kW | 1990 catalogue | |
| D10A8 | 800 | TC = 125 °C | 35 | 210 | 220 | 1.4 | 35 | 0.85 | 15 | 3000 µA (TJ = 150 °C) | 950–1400 V | 12 kW | 1990 catalogue | |
| D10A10 | 1000 | TC = 125 °C | 35 | 210 | 220 | 1.4 | 35 | 0.85 | 15 | 3000 µA (TJ = 150 °C) | 1200–1700 V | 6 kW | 1990 catalogue |
Click a column heading to sort. „+” adds a variant to the comparison (D10A4…D10A10).
Description
The D10A4…D10A10 is a series of controlled-avalanche rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 400…1000 V and a maximum average forward current IFAVM of 10 A, in a DO-4 package [1].
The table prints the series as „D10A4(R) …10(R)”, with the repetitive peak reverse voltage VRRM, the avalanche voltage VRA (explained in a note to the table) and the non-repetitive peak reverse power PRSM given as ranges for the whole series; each code also exists with R, printed „(R)” after the code [1] (in the coding table of section 27.1.2, R takes the place of N and means reverse polarity [2]).
The table of section 27.5 has no drawings; the drawing of the DO-4 package in the Gallery is the one printed in the rectifier diode table of section 27.1.2 [1].
Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:
| Part | Meaning |
|---|---|
| D | function: diode |
| 10 | average forward current IFAV, in A |
| A | type: controlled avalanche (N = normal, R = reverse polarity, F = fast) |
| 4 … 10 | repetitive peak reverse voltage VRRM: here in hundreds of volts (4 = 400 V), while the coding table writes it in volts |
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D10A4, D10A6, D10A8 and D10A10 among the „Controlled avalanche rectifiers” of its „Rectifiers” section [3]. The codes new on this page and the catalog values it did not have (IFAVM temperature, IFRM, VF, IF of VF, VF0, rF, IR) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value and i²t is printed in kA²s; VRA (min–max) is the avalanche voltage and PRSM the non-repetitive peak reverse power, and IR is given at the maximum TJ; the codes marked „(R)” are also made with reverse polarity [3]. For all the codes of this table the catalog gives IFSM 210 A; i²t 220 A²s (elsewhere on this page: IFSM 150 A; i²t 110 A²s) [3].
Conditions (as printed in the table): IFAVM at T = 125 °C; IFSM at T = 150 °C; I²t at T = 160 °C.
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.5 „Alte diode semiconductoare produse în R.S.R.” (producător: IPRS – Băneasa), A. „Diode redresoare cu avalanșă controlată”, p. 516
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489
- [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Controlled avalanche rectifiers”, pp. 5-56…5-57