D10F05…D10F10

The D10F05…D10F10 is a series of high-power fast silicon diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) among the fast silicon switching diodes, with a repetitive peak reverse voltage VRRM of 50…1000 V and a maximum average forward current IFAVM of 10 A [1]. The package drawing is in the Gallery.

The table prints the series as „D10 F05 (R)… …10(R)”, with VRRM 50…1000 V given for the whole series; each code also exists with R [1]. It gives a reverse recovery time trr of 600 ns, IFAVM 10 A at 115 °C, IFSM 150 A at 150 °C, I²t 110 A²s at 150 °C and a junction-to-case thermal resistance of 2.4 °C/W [1]. The column header gives IFAVM in mA (at 25 °C); for this row the value only makes sense in amperes, with its temperature in brackets [1].

Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:

Part	Meaning
D	function: diode
10	average forward current IFAV, in A
F	type: fast (N = normal, R = reverse polarity, A = controlled avalanche)
05 … 10	repetitive peak reverse voltage VRRM: here in hundreds of volts (05 = 50 V), while the coding table writes it in volts

In the coding table R takes the place of N and means reverse polarity (anode on the base); here it is printed after the code, „(R)” [1][2].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D10F05…D10F10 (9 codes) among the „Fast recovery rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [3]. The codes new on this page and the catalog values it did not have (IFAVM temperature, IFRM, VF, IF of VF, VF0, rF, IR, TJM) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value, trr is a maximum (in µs) and i²t is printed in kA²s; the codes marked „(R)” are also made with reverse polarity [3]. For all the codes of this table the catalog gives IFSM 210 A; i²t 220 A²s (elsewhere on this page: IFSM 150 A; i²t 110 A²s) [3].