D10N

The D10N is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 50–1600 V and a maximum average forward current of 10 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The codes are printed „D10 N05(R)” … „D10 N16(R)”: each voltage class also exists with R, which the coding table of the same section gives as reverse polarity (anode on the base); the package drawing marks the stud as the cathode for the codes without R and as the anode for the codes with R [1][2]. In the coding table (NTR 19036-80) R takes the place of N and the voltage is written in volts (200…3000, as in the codes of the D325N…D1600N); in this block the voltage class is written in hundreds of volts (05 = 50 V … 16 = 1600 V) [1][2].

Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:

Part	Meaning
D	function: diode
10	average forward current IFAV, in A (at the specified ambient temperature)
N	type / polarity: N = normal (R = reverse polarity, anode on the base; F = fast; A = controlled avalanche)
05	repetitive peak reverse voltage VRRM (in this block in hundreds of volts: 05 = 50 V)

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D10N05…D10N16 (12 codes) among the „Standard rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [3]. The catalog values this page did not have (IFAVM temperature, IF of VF, VF0, rF, TJM) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s; the codes marked „(R)” are also made with reverse polarity [3]. For all the codes of this table the catalog gives IFRM 30 A (elsewhere on this page: 90 A) [3].

Measurement conditions (as printed in the table): IFRMSM at Tamb = 25 °C; IFAVM at Tamb = 125 °C; VF at IF = 35 A; IR at Tamb = 150 °C; IFSM for 10 ms.