General view

D10VS12…D10VS120

IPRS Băneasa

Also known as
D10VS12, D10VS24, D10VS47, D10VS120
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
transient voltage suppressor diode
Reverse voltage (VR)
12–120 V (see Variants)
Reverse current (IR)
5 µA
Breakdown voltage, min. (VBR min)
13.5–135 V (see Variants)
Breakdown voltage, max. (VBR max)
16.5–165 V (see Variants)
Clamping voltage (VCL)
21.9–219 V (see Variants)
Peak pulse current (Ipp)
11–114 A (see Variants)
Package
DO-27
Application
transient voltage suppressor

Sources: [1]

Variants (4)

NoteCompare
D10VS121213.516.521.91141990 catalogue
D10VS2424273343.8571990 catalogue
D10VS4747546681.930.51990 catalogue
D10VS120120135165219111990 catalogue

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Description

The D10VS12…D10VS120 series are silicon transient voltage suppressor diodes made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D10VS12, D10VS24, D10VS47 and D10VS120 among the „Transient voltage suppressor diodes” of its „Transient voltage suppressors” section [1]. Their values are under Variants [1]. In this table IR and VR are maximum values, VBR (min–max) is given at IR = 1 mA and VCL (max.) is the clamping voltage for 1 ms pulses at the peak pulse current Ipp [1].

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Transient voltage suppressors”, „Transient voltage suppressor diodes”, p. 5-60