General view

D12X

IPRS Băneasa

Also known as
D12X50, D12X100, D12X150, D12X200, D12X300, D12X400
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
ultra-fast recovery rectifier diode
Repetitive peak reverse voltage (VRRM)
50–400 V (see Variants)
Max. average forward current (IFAVM)
12 A
IFAVM given at
TC = 100 °C
Repetitive peak forward current (IFRM)
75 A
Surge forward current (IFSM, 10 ms)
200 A
I²t
200 A²s
Forward voltage (VF)
1.5 V
VF measured at IF
12 A
Reverse current (IR)
2.5 mA (TJ = 100 °C)
Reverse recovery time (trr)
50 ns
Max. junction temperature (Tj)
150 °C
Package
DO-4
Application
rectifier diode

Sources: [1]

Variants (6)

Note
D12X50501990 catalogue (preliminary data)
D12X1001001990 catalogue (preliminary data)
D12X1501501990 catalogue (preliminary data)
D12X2002001990 catalogue (preliminary data)
D12X3003001990 catalogue (preliminary data)
D12X4004001990 catalogue (preliminary data)

Click a column heading to sort. „+” adds a variant to the comparison (D12X).

Description

The D12X is a silicon ultra-fast recovery rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D12X50, D12X100, D12X150, D12X200, D12X300 and D12X400 (preliminary data) among the „Ultra-fast recovery rectifiers” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), trr is a maximum (in ns) and i²t is printed in kA²s; the codes marked „(R)” are also made with reverse polarity [1].

Gallery

IPRS Băneasa D12X: DO-4 case outline, silicon diodes (dimensions in mm)No image available
DO-4 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Ultra-fast recovery rectifiers”, pp. 5-54…5-55