General view

D16AF10

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
fast recovery controlled avalanche diode
Repetitive peak reverse voltage (VRRM)
1000 V
Max. average forward current (IFAVM)
16 A
IFAVM given at
TC = 100 °C
Repetitive peak forward current (IFRM)
147 A
Surge forward current (IFSM, 10 ms)
250 A
I²t
315 A²s
Forward voltage (VF)
1.4 V
VF measured at IF
16 A
Reverse current (IR)
3 mA (TJ = 100 °C)
Reverse recovery time (trr)
600 ns
Avalanche voltage (VRA)
1200–1700 V
Non-repetitive peak reverse power (PRSM)
10 kW
Max. junction temperature (Tj)
150 °C
Package
DO-4
Application
controlled avalanche rectifier diode

Sources: [1]

Description

The D16AF10 is a silicon fast recovery controlled avalanche diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D16AF10 among the „Fast recovery rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [1], with VRRM 1000 V, IFAVM 16 A (TC = 100 °C), IFRM 147 A, IFSM 250 A (10 ms), i²t 0.315 kA²s, VF ≤ 1.4 V (IF = 16 A), IR ≤ 3 mA (TJ = 100 °C), trr ≤ 0.6 µs, TJM 150 °C, avalanche ratings VRA = 1200–1700 V and PRSM = 10 kW, DO-4 case; it is marked „(R)” (also made with reverse polarity) and, in a footnote, „Fast Recovery Controlled Avalanche Diode” [1].

Gallery

IPRS Băneasa D16AF10: DO-4 case outline, silicon diodes (dimensions in mm)No image available
DO-4 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Fast recovery rectifiers ( IFAVM < 100 A )”, pp. 5-46…5-47