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General view

D178S

IPRS Băneasa

Also known as: D178S200, D178S400, D178S600, D178S800, D178S900, D178S1000, D178S1100, D178S1200, D178S1400
Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Diodes
Documentation score: 1/5
Last edited: 25 OCT 2026

Specifications

Material: Si
Type: fast recovery rectifier diode
Repetitive peak reverse voltage (VRRM): 200–1400 V (see Variants)
Max. RMS forward current (IFRMSM): 280 A
Max. average forward current (IFAVM): 180 A
IFAVM given at: TC = 100 °C
Surge forward current (IFSM, 10 ms): 2500 A
I²t: 31250 A²s
Forward voltage (VF): 1.9 V
VF measured at IF: 500 A
Threshold voltage (VF0): 1.1 V
Slope resistance (rF): 2 mΩ
Reverse current (IR): 40 mA (TJ = 150 °C)
Reverse recovery time (trr): 2000 ns
Max. junction temperature (Tj): 150 °C
Package: T-28
Application: rectifier diode

Sources: [1]

Variants (9)

		Note
D178S200	200	1990 catalogue (preliminary data)
D178S400	400	1990 catalogue (preliminary data)
D178S600	600	1990 catalogue (preliminary data)
D178S800	800	1990 catalogue (preliminary data)
D178S900	900	1990 catalogue (preliminary data)
D178S1000	1000	1990 catalogue (preliminary data)
D178S1100	1100	1990 catalogue (preliminary data)
D178S1200	1200	1990 catalogue (preliminary data)
D178S1400	1400	1990 catalogue (preliminary data)

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Description

The D178S is a silicon fast recovery rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D178S200…D178S1400 (9 codes, preliminary data) among the „Fast recovery rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value, trr is a maximum (in µs) and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa D178S: T-28 case outline, silicon diodes (dimensions in mm) — T-28 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

[1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Fast recovery rectifiers ( IFAVM > 100 A )”, pp. 5-50…5-51