General view

D1800N

IPRS Băneasa

Also known as
D1800N2000, D1800N2200, D1800N2400, D1800N2600, D1800N2800, D1800N3000, D1800N3200, D1800N3400, D1800N3600
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
2000–3600 V (see Variants)
Max. RMS forward current (IFRMSM)
3600 A
Max. average forward current (IFAVM)
2550 A
IFAVM given at
TC = 63 °C
Surge forward current (IFSM, 10 ms)
31500 A
I²t
4961000 A²s
Forward voltage (VF)
1.8 V
VF measured at IF
3000 A
Threshold voltage (VF0)
0.9 V
Slope resistance (rF)
0.3 mΩ
Reverse current (IR)
100 mA (TJ = 150 °C)
Max. junction temperature (Tj)
150 °C
Package
T-50
Application
rectifier diode

Sources: [1]

Variants (9)

Note
D1800N200020001990 catalogue
D1800N220022001990 catalogue
D1800N240024001990 catalogue
D1800N260026001990 catalogue
D1800N280028001990 catalogue
D1800N300030001990 catalogue
D1800N320032001990 catalogue
D1800N340034001990 catalogue
D1800N360036001990 catalogue

Click a column heading to sort. „+” adds a variant to the comparison (D1800N).

Description

The D1800N is a silicon standard rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D1800N2000…D1800N3600 (9 codes) among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa D1800N: T-50 case outline, silicon diodes (dimensions in mm)No image available
T-50 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM > 100 A )”, pp. 5-42…5-43