D1A4…D1A12
IPRS Băneasa
- Also known as
- D1A4, D1A6, D1A8, D1A10, D1A12
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Type
- controlled-avalanche rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 6 different values (see Variants)
- Max. average forward current (IFAVM)
- 1 A
- IFAVM given at
- TL = 75 °C (see Variants)
- Repetitive peak forward current (IFRM)
- 3 A (see Variants)
- Surge forward current (IFSM, 10 ms)
- 30–50 A (see Variants)
- I²t
- 4.5–12.5 A²s (see Variants)
- Forward voltage (VF)
- 1.1 V (see Variants)
- VF measured at IF
- 1 A (see Variants)
- Threshold voltage (VF0)
- 1 V (see Variants)
- Slope resistance (rF)
- 66 mΩ (see Variants)
- Reverse current (IR)
- 50 µA (TJ = 150 °C) (see Variants)
- Avalanche voltage (VRA)
- 6 different values (see Variants)
- Non-repetitive peak reverse power (PRSM)
- 6 different values (see Variants)
- Package
- F-126
Variants (6)
| Note | Compare | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| D1A4…D1A12 | 400…1200 V | — | — | 30 | 4.5 | — | — | — | — | — | 450…2000 V | 5…0.5 kW | the whole series, as given elsewhere on this page | |
| D1A4 | 400 | TL = 75 °C | 3 | 50 | 12.5 | 1.1 | 1 | 1 | 66 | 50 µA (TJ = 150 °C) | 450–750 V | 5 kW | 1990 catalogue | |
| D1A6 | 600 | TL = 75 °C | 3 | 50 | 12.5 | 1.1 | 1 | 1 | 66 | 50 µA (TJ = 150 °C) | 720–1000 V | 3 kW | 1990 catalogue | |
| D1A8 | 800 | TL = 75 °C | 3 | 50 | 12.5 | 1.1 | 1 | 1 | 66 | 50 µA (TJ = 150 °C) | 950–1400 V | 2 kW | 1990 catalogue | |
| D1A10 | 1000 | TL = 75 °C | 3 | 50 | 12.5 | 1.1 | 1 | 1 | 66 | 50 µA (TJ = 150 °C) | 1200–1700 V | 1 kW | 1990 catalogue | |
| D1A12 | 1200 | TL = 75 °C | 3 | 50 | 12.5 | 1.1 | 1 | 1 | 66 | 50 µA (TJ = 150 °C) | 1400–2000 V | 0.5 kW | 1990 catalogue |
Click a column heading to sort. „+” adds a variant to the comparison (D1A4…D1A12).
Description
The D1A4…D1A12 is a series of controlled-avalanche rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 400…1200 V and a maximum average forward current IFAVM of 1 A, in an F-126 package [1].
The table prints the series as „D1A4…12”, with the repetitive peak reverse voltage VRRM, the avalanche voltage VRA (explained in a note to the table) and the non-repetitive peak reverse power PRSM given as ranges for the whole series [1].
The table of section 27.5 has no drawings; the drawing of the F-126 package in the Gallery is the one printed in the rectifier diode table of section 27.1.2 [1].
Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:
| Part | Meaning |
|---|---|
| D | function: diode |
| 1 | average forward current IFAV, in A |
| A | type: controlled avalanche (N = normal, R = reverse polarity, F = fast) |
| 4 … 12 | repetitive peak reverse voltage VRRM: here in hundreds of volts (4 = 400 V), while the coding table writes it in volts |
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D1A4, D1A6, D1A8, D1A10 and D1A12 among the „Controlled avalanche rectifiers” of its „Rectifiers” section [3]. The codes new on this page and the catalog values it did not have (IFAVM temperature, IFRM, VF, IF of VF, VF0, rF, IR) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value and i²t is printed in kA²s; VRA (min–max) is the avalanche voltage and PRSM the non-repetitive peak reverse power, and IR is given at the maximum TJ [3]. For all the codes of this table the catalog gives IFSM 50 A; i²t 12.5 A²s (elsewhere on this page: IFSM 30 A; i²t 4.5 A²s) [3].
Conditions (as printed in the table): IFAVM at T = 75 °C; IFSM at T = 150 °C; I²t at T = 150 °C.
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.5 „Alte diode semiconductoare produse în R.S.R.” (producător: IPRS – Băneasa), A. „Diode redresoare cu avalanșă controlată”, p. 516
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489
- [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Controlled avalanche rectifiers”, pp. 5-56…5-57