General view

D25AF10

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
fast recovery controlled avalanche diode
Repetitive peak reverse voltage (VRRM)
1000 V
Max. average forward current (IFAVM)
25 A
IFAVM given at
TC = 100 °C
Repetitive peak forward current (IFRM)
260 A
Surge forward current (IFSM, 10 ms)
400 A
I²t
800 A²s
Forward voltage (VF)
1.5 V
VF measured at IF
25 A
Reverse current (IR)
5 mA (TJ = 100 °C)
Reverse recovery time (trr)
600 ns
Avalanche voltage (VRA)
1200–1700 V
Non-repetitive peak reverse power (PRSM)
13 kW
Max. junction temperature (Tj)
150 °C
Package
DO-5
Application
controlled avalanche rectifier diode

Sources: [1]

Description

The D25AF10 is a silicon fast recovery controlled avalanche diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D25AF10 among the „Fast recovery rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [1], with VRRM 1000 V, IFAVM 25 A (TC = 100 °C), IFRM 260 A, IFSM 400 A (10 ms), i²t 0.8 kA²s, VF ≤ 1.5 V (IF = 25 A), IR ≤ 5 mA (TJ = 100 °C), trr ≤ 0.6 µs, TJM 150 °C, avalanche ratings VRA = 1200–1700 V and PRSM = 13 kW, DO-5 case; it is marked „(R)” (also made with reverse polarity) and, in a footnote, „Fast Recovery Controlled Avalanche Diode” [1].

Gallery

IPRS Băneasa D25AF10: DO-5 case outline, silicon diodes (dimensions in mm)No image available
DO-5 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Fast recovery rectifiers ( IFAVM < 100 A )”, pp. 5-48…5-49