D32F05…D32F10
IPRS Băneasa
- Also known as
- D32F05, D32F1, D32F2, D32F3, D32F4, D32F5, D32F6, D32F8, D32F10
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si
- Type
- fast switching diode
- Repetitive peak reverse voltage (VRRM)
- 10 different values (see Variants)
- Max. average forward current (IFAVM)
- 32 A
- IFAVM given at
- TC = 90 °C (see Variants)
- Repetitive peak forward current (IFRM)
- 100 A (see Variants)
- Surge forward current (IFSM, 10 ms)
- 300–400 A (see Variants)
- I²t
- 450–800 A²s (see Variants)
- Forward voltage (VF)
- 1.5 V (see Variants)
- VF measured at IF
- 30 A (see Variants)
- Threshold voltage (VF0)
- 1.1 V (see Variants)
- Slope resistance (rF)
- 9 mΩ (see Variants)
- Reverse current (IR)
- 5 mA (TJ = 100 °C) (see Variants)
- Reverse recovery time (trr)
- 800 ns
- Max. junction temperature (Tj)
- 150 °C (see Variants)
- Thermal resistance, junction–case (Rth j-c)
- 1 °C/W
- Package
- DO-5
Variants (10)
| Note | Compare | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| D32F05…D32F10 | 50…1000 V | — | — | 300 | 450 | — | — | — | — | — | — | the whole series, as given elsewhere on this page | |
| D32F05 | 50 | TC = 90 °C | 100 | 400 | 800 | 1.5 | 30 | 1.1 | 9 | 5 mA (TJ = 100 °C) | 150 | 1990 catalogue | |
| D32F1 | 100 | TC = 90 °C | 100 | 400 | 800 | 1.5 | 30 | 1.1 | 9 | 5 mA (TJ = 100 °C) | 150 | 1990 catalogue | |
| D32F2 | 200 | TC = 90 °C | 100 | 400 | 800 | 1.5 | 30 | 1.1 | 9 | 5 mA (TJ = 100 °C) | 150 | 1990 catalogue | |
| D32F3 | 300 | TC = 90 °C | 100 | 400 | 800 | 1.5 | 30 | 1.1 | 9 | 5 mA (TJ = 100 °C) | 150 | 1990 catalogue | |
| D32F4 | 400 | TC = 90 °C | 100 | 400 | 800 | 1.5 | 30 | 1.1 | 9 | 5 mA (TJ = 100 °C) | 150 | 1990 catalogue | |
| D32F5 | 500 | TC = 90 °C | 100 | 400 | 800 | 1.5 | 30 | 1.1 | 9 | 5 mA (TJ = 100 °C) | 150 | 1990 catalogue | |
| D32F6 | 600 | TC = 90 °C | 100 | 400 | 800 | 1.5 | 30 | 1.1 | 9 | 5 mA (TJ = 100 °C) | 150 | 1990 catalogue | |
| D32F8 | 800 | TC = 90 °C | 100 | 400 | 800 | 1.5 | 30 | 1.1 | 9 | 5 mA (TJ = 100 °C) | 150 | 1990 catalogue | |
| D32F10 | 1000 | TC = 90 °C | 100 | 400 | 800 | 1.5 | 30 | 1.1 | 9 | 5 mA (TJ = 100 °C) | 150 | 1990 catalogue |
Click a column heading to sort. „+” adds a variant to the comparison (D32F05…D32F10).
Description
The D32F05…D32F10 is a series of high-power fast silicon diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) among the fast silicon switching diodes, with a repetitive peak reverse voltage VRRM of 50…1000 V and a maximum average forward current IFAVM of 32 A [1]. The package drawing is in the Gallery.
The table prints the series as „D32 F05 (R)… …10(R)”, with VRRM 50…1000 V given for the whole series; each code also exists with R [1]. It gives a reverse recovery time trr of 800 ns, IFAVM 32 A at 90 °C, IFSM 300 A at 150 °C, I²t 450 A²s at 150 °C and a junction-to-case thermal resistance of 1 °C/W [1]. The column header gives IFAVM in mA (at 25 °C); for this row the value only makes sense in amperes, with its temperature in brackets [1].
Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:
| Part | Meaning |
|---|---|
| D | function: diode |
| 32 | average forward current IFAV, in A |
| F | type: fast (N = normal, R = reverse polarity, A = controlled avalanche) |
| 05 … 10 | repetitive peak reverse voltage VRRM: here in hundreds of volts (05 = 50 V), while the coding table writes it in volts |
In the coding table R takes the place of N and means reverse polarity (anode on the base); here it is printed after the code, „(R)” [1][2].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D32F05…D32F10 (9 codes) among the „Fast recovery rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [3]. The codes new on this page and the catalog values it did not have (IFAVM temperature, IFRM, VF, IF of VF, VF0, rF, IR, TJM) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum, trr is a maximum (in µs) and i²t is printed in kA²s; the codes marked „(R)” are also made with reverse polarity [3]. For all the codes of this table the catalog gives IFSM 400 A; i²t 800 A²s (elsewhere on this page: IFSM 300 A; i²t 450 A²s) [3].
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489
- [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Fast recovery rectifiers ( IFAVM < 100 A )”, pp. 5-48…5-49