General view

D32X

IPRS Băneasa

Also known as
D32X50, D32X100, D32X150, D32X200, D32X300, D32X400
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
ultra-fast recovery rectifier diode
Repetitive peak reverse voltage (VRRM)
50–400 V (see Variants)
Max. average forward current (IFAVM)
32 A
IFAVM given at
TC = 90 °C
Repetitive peak forward current (IFRM)
75 A
Surge forward current (IFSM, 10 ms)
500 A
I²t
1250 A²s
Forward voltage (VF)
1.5 V
VF measured at IF
30 A
Reverse current (IR)
6 mA (TJ = 100 °C)
Reverse recovery time (trr)
50 ns
Max. junction temperature (Tj)
150 °C
Package
DO-5
Application
rectifier diode

Sources: [1]

Variants (6)

Note
D32X50501990 catalogue (preliminary data)
D32X1001001990 catalogue (preliminary data)
D32X1501501990 catalogue (preliminary data)
D32X2002001990 catalogue (preliminary data)
D32X3003001990 catalogue (preliminary data)
D32X4004001990 catalogue (preliminary data)

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Description

The D32X is a silicon ultra-fast recovery rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D32X50, D32X100, D32X150, D32X200, D32X300 and D32X400 (preliminary data) among the „Ultra-fast recovery rectifiers” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), trr is a maximum (in ns) and i²t is printed in kA²s; the codes marked „(R)” are also made with reverse polarity [1].

Gallery

IPRS Băneasa D32X: DO-5 case outline, silicon diodes (dimensions in mm)No image available
DO-5 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Ultra-fast recovery rectifiers”, pp. 5-54…5-55