D355N
IPRS Băneasa
- Also known as
- D355N200B, D355R200B, D355N400B, D355R400B, D355N600B, D355R600B, D355N800B, D355R800B, D355N1000B, D355R1000B, D355N1200B, D355R1200B, D355N1400B, D355R1400B, D355N1600B, D355R1600B, D355N1800B, D355R1800B, D355N2000B, D355R2000B
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si
- Type
- rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 200–2000 V (see Variants)
- Max. RMS forward current (IFRMSM)
- 550 A
- Max. average forward current (IFAVM)
- 355 A
- IFAVM given at
- TC = 100 °C
- Repetitive peak forward current (IFRM)
- 550–560 A (see Variants)
- Surge forward current (IFSM, 10 ms)
- 8500 A
- I²t
- 361000 A²s
- Forward voltage (VF)
- 1.55 V
- VF measured at IF
- 1000 A
- Threshold voltage (VF0)
- 0.72 V
- Slope resistance (rF)
- 0.72 mΩ
- Reverse current (IR)
- 20 mA
- Max. junction temperature (Tj)
- 150 °C
- Package
- B42
Variants (20)
| Note | Compare | |||
|---|---|---|---|---|
| D355N200B | 200 | 550 | ||
| D355N400B | 400 | 550 | ||
| D355N600B | 600 | 550 | ||
| D355N800B | 800 | 550 | ||
| D355N1000B | 1000 | 550 | ||
| D355N1200B | 1200 | 560 | ||
| D355N1400B | 1400 | 550 | ||
| D355N1600B | 1600 | 550 | ||
| D355N1800B | 1800 | 550 | ||
| D355N2000B | 2000 | 550 | ||
| D355R200B | 200 | 550 | reverse polarity | |
| D355R400B | 400 | 550 | reverse polarity | |
| D355R600B | 600 | 550 | reverse polarity | |
| D355R800B | 800 | 550 | reverse polarity | |
| D355R1000B | 1000 | 550 | reverse polarity | |
| D355R1200B | 1200 | 560 | reverse polarity | |
| D355R1400B | 1400 | 550 | reverse polarity | |
| D355R1600B | 1600 | 550 | reverse polarity | |
| D355R1800B | 1800 | 550 | reverse polarity | |
| D355R2000B | 2000 | 550 | reverse polarity |
Click a column heading to sort. „+” adds a variant to the comparison (D355N).
Description
The D355N is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 200–2000 V and a maximum average forward current of 355 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The table prints the block as „D355 N(R) 200 B … 2000 B”, with the voltage classes 200, 400, 600, 800, 1000, 1200, 1400, 1600, 1800 and 2000 V; the codes in the Variants table are formed by the coding table of the same section (NTR 19036-80) [1][2].
The B42 package drawing marks the stud as the anode and the lead as the cathode for the codes with N, and the reverse for the codes with R, while the coding table describes R as reverse polarity with the anode on the base [1][2].
Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:
| Part | Meaning |
|---|---|
| D | function: diode |
| 355 | average forward current IFAV, in A (at the specified ambient temperature) |
| N | type / polarity: N = normal (R = reverse polarity, anode on the base; F = fast; A = controlled avalanche) |
| 200 | repetitive peak reverse voltage VRRM, in V |
| B | package: B = stud with braided lead (A = wire–wire, B = stud with braided lead, E = flat base with braided lead, T = disc) |
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D355N200…D355N2000 (10 codes) among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [3]. The catalog values this page did not have (IFAVM temperature, IFRM, IF of VF, VF0, rF, TJM) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s; D355R200…D355R2000 are the D355N200…D355N2000 with reverse polarity; the catalog prints these codes without the final letter they have on this page (D355N200…D355N2000); the 550 A that this page gives as IF RMS is in the catalog’s IFRM column [3]. For the D355N1200B the catalog gives IFRM 560 A (the other codes: 550 A) [3].
Measurement conditions (as printed in the table): IFRMSM at Tamb = 25 °C; IFAVM at Tamb = 100 °C; VF at IF = 1000 A; IR at Tamb = 150 °C; IFSM for 10 ms.
Gallery
No image available
No image availableDocuments
No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 496–497
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489
- [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM > 100 A )”, pp. 5-32…5-33