D358N

The D358N is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 200–800 V and a maximum average forward current of 360 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The table prints the block as „D358 N 200 T … 800 T”, with the voltage classes 200, 400, 600, 700 and 800 V; the codes in the Variants table are formed by the coding table of the same section (NTR 19036-80) [1][2].

The code gives 358 A as the average forward current, while the table prints IFAVM = 360 A [1][2].

Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:

Part	Meaning
D	function: diode
358	average forward current IFAV, in A (at the specified ambient temperature)
N	type / polarity: N = normal (R = reverse polarity, anode on the base; F = fast; A = controlled avalanche)
200	repetitive peak reverse voltage VRRM, in V
T	package: T = disc (A = wire–wire, B = stud with braided lead, E = flat base with braided lead, T = disc)

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D358N200…D358N1800 (10 codes) among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [3]. The codes new on this page and the catalog values it did not have (IFAVM temperature, IFRM, IF of VF, VF0, rF, TJM) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s; the catalog prints these codes without the final letter they have on this page (D358N200…D358N800) [3]. For the codes of this table already on this page the catalog gives IFSM 4800 A; i²t 115000 A²s (elsewhere on this page: IFSM 5000 A; i²t 125000 A²s) [3].

Measurement conditions (as printed in the table): IFRMSM at Tamb = 25 °C; IFAVM at Tamb = 100 °C; VF at IF = 1000 A; IR at Tamb = 150 °C; IFSM for 10 ms.