General view

D3N1…D3N10

IPRS Băneasa

Also known as
D3N1, D3N2, D3N3, D3N4, D3N5, D3N6, D3N8, D3N10
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
100–1000 V (see Variants)
Max. average forward current (IFAVM)
3 A
IFAVM given at
TA = 45 °C
Repetitive peak forward current (IFRM)
20 A
Surge forward current (IFSM, 10 ms)
160 A
I²t
128 A²s
Forward voltage (VF)
1.24 V
VF measured at IF
9.5 A
Threshold voltage (VF0)
0.64 V
Slope resistance (rF)
30 mΩ
Reverse current (IR)
3000 µA (TJ = 155 °C)
Max. junction temperature (Tj)
150 °C
Package
DO-27A
Application
rectifier diode

Sources: [1]

Variants (8)

Note
D3N11001990 catalogue (preliminary data)
D3N22001990 catalogue (preliminary data)
D3N33001990 catalogue (preliminary data)
D3N44001990 catalogue (preliminary data)
D3N55001990 catalogue (preliminary data)
D3N66001990 catalogue (preliminary data)
D3N88001990 catalogue (preliminary data)
D3N1010001990 catalogue (preliminary data)

Click a column heading to sort. „+” adds a variant to the comparison (D3N1…D3N10).

Description

The D3N1…D3N10 series are silicon standard rectifier diodes made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D3N1, D3N2, D3N3, D3N4, D3N5, D3N6, D3N8 and D3N10 (preliminary data) among the „Standard rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa D3N1…D3N10: DO-27A case outline, silicon diodes (dimensions in mm)No image available
DO-27A case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM < 100 A )”, pp. 5-20…5-21