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D3VS12…D3VS120
IPRS Băneasa
- Also known as
- D3VS12, D3VS24, D3VS47, D3VS120
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si
- Type
- transient voltage suppressor diode
- Reverse voltage (VR)
- 12–120 V (see Variants)
- Reverse current (IR)
- 5 µA
- Breakdown voltage, min. (VBR min)
- 13.5–135 V (see Variants)
- Breakdown voltage, max. (VBR max)
- 16.5–165 V (see Variants)
- Clamping voltage (VCL)
- 21.9–219 V (see Variants)
- Peak pulse current (Ipp)
- 4.8–47.1 A (see Variants)
- Package
- DO-27
- Application
- transient voltage suppressor
Sources: [1]
Variants (4)
| Note | Compare | ||||||
|---|---|---|---|---|---|---|---|
| D3VS12 | 12 | 13.5 | 16.5 | 21.9 | 47.1 | 1990 catalogue | |
| D3VS24 | 24 | 27 | 33 | 43.8 | 24 | 1990 catalogue | |
| D3VS47 | 47 | 54 | 66 | 81.9 | 12.9 | 1990 catalogue | |
| D3VS120 | 120 | 135 | 165 | 219 | 4.8 | 1990 catalogue |
Click a column heading to sort. „+” adds a variant to the comparison (D3VS12…D3VS120).
Description
The D3VS12…D3VS120 series are silicon transient voltage suppressor diodes made by IPRS Băneasa [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D3VS12, D3VS24, D3VS47 and D3VS120 among the „Transient voltage suppressor diodes” of its „Transient voltage suppressors” section [1]. Their values are under Variants [1]. In this table IR and VR are maximum values, VBR (min–max) is given at IR = 1 mA and VCL (max.) is the clamping voltage for 1 ms pulses at the peak pulse current Ipp [1].
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References
- [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Transient voltage suppressors”, „Transient voltage suppressor diodes”, p. 5-60