General view

D4000N

IPRS Băneasa

Also known as
D4000N200, D4000N400, D4000N600
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
200–600 V (see Variants)
Max. average forward current (IFAVM)
4000 A
IFAVM given at
TC = 80 °C
Surge forward current (IFSM, 10 ms)
40000 A
I²t
8000000 A²s
Forward voltage (VF)
1.45 V
VF measured at IF
15000 A
Threshold voltage (VF0)
0.7 V
Slope resistance (rF)
0.037 mΩ
Reverse current (IR)
100 mA (TJ = 180 °C)
Max. junction temperature (Tj)
180 °C
Package
T-50
Application
rectifier diode

Sources: [1]

Variants (3)

Note
D4000N2002001990 catalogue (preliminary data)
D4000N4004001990 catalogue (preliminary data)
D4000N6006001990 catalogue (preliminary data)

Click a column heading to sort. „+” adds a variant to the comparison (D4000N).

Description

The D4000N is a silicon standard rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D4000N200, D4000N400 and D4000N600 (preliminary data) among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa D4000N: T-50 case outline, silicon diodes (dimensions in mm)No image available
T-50 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM > 100 A )”, pp. 5-42…5-43