D400S
IPRS Băneasa
- Also known as
- D400S1200, D400S1400, D400S1600, D400S1800, D400S2000, D400S2200, D400S2400, D400S2600
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si
- Type
- fast switching diode
- Repetitive peak reverse voltage (VRRM)
- 9 different values (see Variants)
- Max. RMS forward current (IFRMSM)
- 900 A (see Variants)
- Max. average forward current (IFAVM)
- 400 A
- IFAVM given at
- TC = 100 °C (see Variants)
- Surge forward current (IFSM, 10 ms)
- 6320–7750 A (see Variants)
- I²t
- 260000–300000 A²s (see Variants)
- Forward voltage (VF)
- 2.4 V (see Variants)
- VF measured at IF
- 1200 A (see Variants)
- Threshold voltage (VF0)
- 1.2 V (see Variants)
- Slope resistance (rF)
- 0.89 mΩ (see Variants)
- Reverse current (IR)
- 80 mA (TJ = 150 °C) (see Variants)
- Reverse recovery time (trr)
- 6000 ns
- Stored charge (Qs)
- 360 µAs (see Variants)
- Max. junction temperature (Tj)
- 150 °C (see Variants)
- Thermal resistance, junction–case (Rth j-c)
- 0.06 °C/W
- Package
- T30, T-30 (see Variants)
Variants (9)
| Note | Compare | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| D400S | 1200…2600 V | — | — | 6320 | 260000 | — | — | — | — | — | — | — | T30 | the whole series, as given elsewhere on this page | |
| D400S1200 | 1200 | 900 | TC = 100 °C | 7750 | 300000 | 2.4 | 1200 | 1.2 | 0.89 | 80 mA (TJ = 150 °C) | 360 | 150 | T-30 | 1990 catalogue | |
| D400S1400 | 1400 | 900 | TC = 100 °C | 7750 | 300000 | 2.4 | 1200 | 1.2 | 0.89 | 80 mA (TJ = 150 °C) | 360 | 150 | T-30 | 1990 catalogue | |
| D400S1600 | 1600 | 900 | TC = 100 °C | 7750 | 300000 | 2.4 | 1200 | 1.2 | 0.89 | 80 mA (TJ = 150 °C) | 360 | 150 | T-30 | 1990 catalogue | |
| D400S1800 | 1800 | 900 | TC = 100 °C | 7750 | 300000 | 2.4 | 1200 | 1.2 | 0.89 | 80 mA (TJ = 150 °C) | 360 | 150 | T-30 | 1990 catalogue | |
| D400S2000 | 2000 | 900 | TC = 100 °C | 7750 | 300000 | 2.4 | 1200 | 1.2 | 0.89 | 80 mA (TJ = 150 °C) | 360 | 150 | T-30 | 1990 catalogue | |
| D400S2200 | 2200 | 900 | TC = 100 °C | 7750 | 300000 | 2.4 | 1200 | 1.2 | 0.89 | 80 mA (TJ = 150 °C) | 360 | 150 | T-30 | 1990 catalogue | |
| D400S2400 | 2400 | 900 | TC = 100 °C | 7750 | 300000 | 2.4 | 1200 | 1.2 | 0.89 | 80 mA (TJ = 150 °C) | 360 | 150 | T-30 | 1990 catalogue | |
| D400S2600 | 2600 | 900 | TC = 100 °C | 7750 | 300000 | 2.4 | 1200 | 1.2 | 0.89 | 80 mA (TJ = 150 °C) | 360 | 150 | T-30 | 1990 catalogue |
Click a column heading to sort. „+” adds a variant to the comparison (D400S).
Description
The D400S is a high-power fast silicon diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) among the fast silicon switching diodes, with a repetitive peak reverse voltage VRRM of 1200…2600 V and a maximum average forward current IFAVM of 400 A, in a T30 disc package [1]. The package drawing is in the Gallery.
The code is printed „D400 S 1200… …2600”, with VRRM 1200…2600 V for the whole series; the table gives a reverse recovery time trr of 6000 ns, IFAVM 400 A at 100 °C, IFSM 6320 A at 150 °C, I²t 260 000 A²s (no temperature in brackets, so at the 25 °C of the column header) and a junction-to-case thermal resistance of 0.06 °C/W [1]. The coding table of section 27.1.2 does not explain the letter S [2]. The column header gives IFAVM in mA (at 25 °C); for this row the value only makes sense in amperes, with its temperature in brackets [1].
The row below it is printed „D4?0S 1200… …2600”, with the middle digit of the code unclear in the scan (it looks like 8 or 9); it gives VRRM 1200…2600 V, trr 6000 ns, IFAVM 495 A at 100 °C, IFSM 8300 A at 150 °C, I²t 344 500 A²s at 150 °C and 0.06 °C/W, in the same T30 package [1]. It has no page of its own because its code cannot be read.
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D400S1200, D400S1400, D400S1600, D400S1800, D400S2000, D400S2200, D400S2400 and D400S2600 among the „Fast recovery rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [3]. The codes new on this page and the catalog values it did not have (IF RMS, IFAVM temperature, VF, IF of VF, VF0, rF, IR, Qs, TJM) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum, Qs (stored charge, µAs) is a maximum and i²t is printed in kA²s [3]. For all the codes of this table the catalog gives IFSM 7750 A; i²t 300000 A²s (elsewhere on this page: IFSM 6320 A; i²t 260000 A²s) [3].
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489
- [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Fast recovery rectifiers ( IFAVM > 100 A )”, pp. 5-50…5-51