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D448N

IPRS Băneasa

Also known as
D448N200, D448N400, D448N600, D448N700, D448N800
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
200–800 V (see Variants)
Max. average forward current (IFAVM)
450 A
IFAVM given at
TC = 120 °C
Repetitive peak forward current (IFRM)
700 A
Surge forward current (IFSM, 10 ms)
4900 A
I²t
120000 A²s
Threshold voltage (VF0)
0.7 V
Slope resistance (rF)
0.45 mΩ
Reverse current (IR)
20 mA (TJ = 150 °C)
Max. junction temperature (Tj)
150 °C
Package
T-20
Application
rectifier diode

Sources: [1]

Variants (5)

Note
D448N2002001990 catalogue (preliminary data)
D448N4004001990 catalogue (preliminary data)
D448N6006001990 catalogue (preliminary data)
D448N7007001990 catalogue (preliminary data)
D448N8008001990 catalogue (preliminary data)

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Description

The D448N is a silicon standard rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D448N200, D448N400, D448N600, D448N700 and D448N800 (preliminary data) among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa D448N: T-20 case outline, silicon diodes (dimensions in mm)No image available
T-20 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM > 100 A )”, pp. 5-36…5-37