General view

D450N

IPRS Băneasa

Also known as
D450N200E, D450R200E, D450N400E, D450R400E, D450N600E, D450R600E, D450N800E, D450R800E, D450N1000E, D450R1000E, D450N1200E, D450R1200E, D450N1400E, D450R1400E, D450N1600E, D450R1600E, D450N1800E, D450R1800E, D450N2000E, D450R2000E
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
200–2000 V (see Variants)
Max. RMS forward current (IFRMSM)
700 A
Max. average forward current (IFAVM)
450 A
IFAVM given at
TC = 100 °C
Repetitive peak forward current (IFRM)
700 A
Surge forward current (IFSM, 10 ms)
10200 A
I²t
520000 A²s
Forward voltage (VF)
1.3 V
VF measured at IF
1000 A
Threshold voltage (VF0)
0.8 V
Slope resistance (rF)
0.4 mΩ
Reverse current (IR)
40 mA
Max. junction temperature (Tj)
150 °C
Package
E50

Sources: [1][3]

Variants (20)

NoteCompare
D450N200E200
D450N400E400
D450N600E600
D450N800E800
D450N1000E1000
D450N1200E1200
D450N1400E1400
D450N1600E1600
D450N1800E1800
D450N2000E2000
D450R200E200reverse polarity
D450R400E400reverse polarity
D450R600E600reverse polarity
D450R800E800reverse polarity
D450R1000E1000reverse polarity
D450R1200E1200reverse polarity
D450R1400E1400reverse polarity
D450R1600E1600reverse polarity
D450R1800E1800reverse polarity
D450R2000E2000reverse polarity

Click a column heading to sort. „+” adds a variant to the comparison (D450N).

Description

The D450N is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 200–2000 V and a maximum average forward current of 450 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The table prints the block as „D450 N(R) 200 E … 2000 E”, with the voltage classes 200, 400, 600, 800, 1000, 1200, 1400, 1600, 1800 and 2000 V; the codes in the Variants table are formed by the coding table of the same section (NTR 19036-80) [1][2].

The E50 package drawing marks the base as the anode and the lead as the cathode for the codes with N, and the reverse for the codes with R, while the coding table describes R as reverse polarity with the anode on the base [1][2].

The ambient temperature for IFAVM is printed „1000” °C, an obvious misprint; it is given here as 100 °C, the value printed for the other diodes of this group [1].

Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:

Part Meaning
D function: diode
450 average forward current IFAV, in A (at the specified ambient temperature)
N type / polarity: N = normal (R = reverse polarity, anode on the base; F = fast; A = controlled avalanche)
200 repetitive peak reverse voltage VRRM, in V
E package: E = flat base with braided lead (A = wire–wire, B = stud with braided lead, E = flat base with braided lead, T = disc)

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D450N200…D450N2000 (10 codes) among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [3]. The catalog values this page did not have (IFAVM temperature, IFRM, IF of VF, VF0, rF, TJM) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s; D450R200…D450R2000 are the D450N200…D450N2000 with reverse polarity; the catalog prints these codes without the final letter they have on this page (D450N200…D450N2000); the 700 A that this page gives as IF RMS is in the catalog’s IFRM column [3].

Measurement conditions (as printed in the table): IFRMSM at Tamb = 25 °C; IFAVM at Tamb = 1000 °C; VF at IF = 1000 A; IR at Tamb = 150 °C; IFSM for 10 ms.

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 496–497
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489
  3. [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM > 100 A )”, pp. 5-36…5-37