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D495S

IPRS Băneasa

Also known as
D495S1200, D495S1400, D495S1600, D495S1800, D495S2000, D495S2200, D495S2400, D495S2600
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
fast recovery rectifier diode
Repetitive peak reverse voltage (VRRM)
1200–2600 V (see Variants)
Max. RMS forward current (IFRMSM)
1160 A
Max. average forward current (IFAVM)
495 A
IFAVM given at
TC = 90 °C
Surge forward current (IFSM, 10 ms)
10000 A
I²t
500000 A²s
Forward voltage (VF)
2.1 V
VF measured at IF
1200 A
Threshold voltage (VF0)
1.06 V
Slope resistance (rF)
0.65 mΩ
Reverse current (IR)
80 mA (TJ = 150 °C)
Stored charge (Qs)
360 µAs
Max. junction temperature (Tj)
150 °C
Package
T-30
Application
rectifier diode

Sources: [1]

Variants (8)

Note
D495S120012001990 catalogue
D495S140014001990 catalogue
D495S160016001990 catalogue
D495S180018001990 catalogue
D495S200020001990 catalogue
D495S220022001990 catalogue
D495S240024001990 catalogue
D495S260026001990 catalogue

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Description

The D495S is a silicon fast recovery rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D495S1200, D495S1400, D495S1600, D495S1800, D495S2000, D495S2200, D495S2400 and D495S2600 among the „Fast recovery rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum, Qs (stored charge, µAs) is a maximum and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa D495S: T-30 case outline, silicon diodes (dimensions in mm)No image available
T-30 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Fast recovery rectifiers ( IFAVM > 100 A )”, pp. 5-52…5-53