General view

D508N

IPRS Băneasa

Also known as
D508N1400, D508N1600, D508N1800, D508N2000, D508N2200, D508N2400, D508N2600
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
1400–2600 V (see Variants)
Max. average forward current (IFAVM)
650 A
IFAVM given at
TC = 83 °C
Repetitive peak forward current (IFRM)
1020 A
Surge forward current (IFSM, 10 ms)
7300 A
I²t
266000 A²s
Threshold voltage (VF0)
0.85 V
Slope resistance (rF)
0.45 mΩ
Reverse current (IR)
50 mA (TJ = 150 °C)
Max. junction temperature (Tj)
150 °C
Package
T-36A
Application
rectifier diode

Sources: [1]

Variants (7)

Note
D508N140014001990 catalogue (preliminary data)
D508N160016001990 catalogue (preliminary data)
D508N180018001990 catalogue (preliminary data)
D508N200020001990 catalogue (preliminary data)
D508N220022001990 catalogue (preliminary data)
D508N240024001990 catalogue (preliminary data)
D508N260026001990 catalogue (preliminary data)

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Description

The D508N is a silicon standard rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D508N1400, D508N1600, D508N1800, D508N2000, D508N2200, D508N2400 and D508N2600 (preliminary data) among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa D508N: T-36A case outline, silicon diodes (dimensions in mm)No image available
T-36A case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM > 100 A )”, pp. 5-36…5-37