General view

D630N

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
08 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
1400–3000 V (see Variants)
Max. RMS forward current (IFRMSM)
1300 A
Max. average forward current (IFAVM)
630 A
Surge forward current (IFSM, 10 ms)
10000 A
Forward voltage (VF)
1.75 V
Reverse current (IR)
60 mA
Package
T30

Sources: [1]

Variants (9)

D630N1400T1400
D630N1600T1600
D630N1800T1800
D630N2000T2000
D630N2200T2200
D630N2400T2400
D630N2600T2600
D630N2800T2800
D630N3000T3000

Click a column heading to sort. „+” adds a variant to the comparison (D630N).

Description

The D630N is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 1400–3000 V and a maximum average forward current of 630 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The table prints the block as „D630 N 1400 T … 3000 T”, with the voltage classes 1400, 1600, 1800, 2000, 2200, 2400, 2600, 2800 and 3000 V; the codes in the Variants table are formed by the coding table of the same section (NTR 19036-80) [1][2].

Coded as (IPRS Băneasa code for medium- and high-power silicon rectifier diodes, NTR 19036-80) [2]:

Part Meaning
D function: diode
630 average forward current IFAV, in A (at the specified ambient temperature)
N type / polarity: N = normal (R = reverse polarity, anode on the base; F = fast; A = controlled avalanche)
1400 repetitive peak reverse voltage VRRM, in V
T package: T = disc (A = wire–wire, B = stud with braided lead, E = flat base with braided lead, T = disc)

Measurement conditions (as printed in the table): IFRMSM at Tamb = 25 °C; IFAVM at Tamb = 100 °C; VF at IF = 2000 A; IR at Tamb = 150 °C; IFSM for 10 ms.

Gallery

IPRS Băneasa D630N: T30 disc package, rectifier diode (C = cathode, A = anode)No image available
T30 disc package, rectifier diode (C = cathode, A = anode)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 498–499
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489