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D658S

IPRS Băneasa

Also known as
D658S1000, D658S1200, D658S1400
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
fast recovery rectifier diode
Repetitive peak reverse voltage (VRRM)
1000–1400 V (see Variants)
Max. RMS forward current (IFRMSM)
1430 A
Max. average forward current (IFAVM)
660 A
IFAVM given at
TC = 100 °C
Surge forward current (IFSM, 10 ms)
12500 A
Forward voltage (VF)
3.6 V
VF measured at IF
2860 A
Threshold voltage (VF0)
1 V
Slope resistance (rF)
0.45 mΩ
Reverse current (IR)
200 mA (TJ = 150 °C)
Stored charge (Qs)
110 µAs
Max. junction temperature (Tj)
150 °C
Package
T-36A
Application
rectifier diode

Sources: [1]

Variants (3)

Note
D658S100010001990 catalogue (preliminary data)
D658S120012001990 catalogue (preliminary data)
D658S140014001990 catalogue (preliminary data)

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Description

The D658S is a silicon fast recovery rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D658S1000, D658S1200 and D658S1400 (preliminary data) among the „Fast recovery rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value, Qs (stored charge, µAs) is a maximum [1].

Gallery

IPRS Băneasa D658S: T-36A case outline, silicon diodes (dimensions in mm)No image available
T-36A case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Fast recovery rectifiers ( IFAVM > 100 A )”, pp. 5-52…5-53