General view

D668N

IPRS Băneasa

Also known as
D668N2000, D668N2200, D668N2400, D668N2600, D668N2800
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
1800–2200 V (see Variants)
Max. RMS forward current (IFRMSM)
1260 A
Max. average forward current (IFAVM)
670 A
IFAVM given at
TC = 100 °C
Surge forward current (IFSM, 10 ms)
9000 A
I²t
405000 A²s
Forward voltage (VF)
1.96 V
VF measured at IF
2400 A
Threshold voltage (VF0)
0.8 V
Slope resistance (rF)
0.55 mΩ
Reverse current (IR)
40 mA (TJ = 150 °C)
Max. junction temperature (Tj)
150 °C
Package
T-28
Application
rectifier diode

Sources: [1]

Variants (5)

Note
D668N200020001990 catalogue
D668N220022001990 catalogue
D668N240018001990 catalogue; VRRM printed „1800”
D668N260020001990 catalogue; VRRM printed „2000”
D668N280022001990 catalogue; VRRM printed „2200”

Click a column heading to sort. „+” adds a variant to the comparison (D668N).

Description

The D668N is a silicon standard rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D668N2000, D668N2200, D668N2400, D668N2600 and D668N2800 among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa D668N: T-28 case outline, silicon diodes (dimensions in mm)No image available
T-28 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM > 100 A )”, pp. 5-38…5-39