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D798N

IPRS Băneasa

Also known as
D798N200, D798N400, D798N600, D798N800, D798N1000, D798N1200, D798N1400, D798N1600, D798N1800
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
200–1800 V (see Variants)
Max. RMS forward current (IFRMSM)
1780 A
Max. average forward current (IFAVM)
800 A
IFAVM given at
TC = 100 °C
Surge forward current (IFSM, 10 ms)
14700 A
I²t
1080000 A²s
Forward voltage (VF)
1.85 V
VF measured at IF
3400 A
Threshold voltage (VF0)
0.75 V
Slope resistance (rF)
0.33 mΩ
Reverse current (IR)
30 mA (TJ = 150 °C)
Max. junction temperature (Tj)
150 °C
Package
T-28
Application
rectifier diode

Sources: [1]

Variants (9)

Note
D798N2002001990 catalogue
D798N4004001990 catalogue
D798N6006001990 catalogue
D798N8008001990 catalogue
D798N100010001990 catalogue
D798N120012001990 catalogue
D798N140014001990 catalogue
D798N160016001990 catalogue
D798N180018001990 catalogue

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Description

The D798N is a silicon standard rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D798N200…D798N1800 (9 codes) among the „Standard rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa D798N: T-28 case outline, silicon diodes (dimensions in mm)No image available
T-28 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM > 100 A )”, pp. 5-38…5-39